Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Cao, Yufei ^a   Cai, Kaiming ^a   Hu, Pingan ^b   Zhao, Lixia ^a   Yan, Tengfei ^a   Luo, Wengang ^a   Zhang, Xinhui ^a   Wu, Xiaoguang ^a   Wang, Kaiyou ^a   Zheng, Houzhi ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84942629959     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep08130     Document Type: Article

References (35)

1. Liu, F. C. et al. High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes. ACS Nano 8, 752-760 (2014).
2. Zhang, W. J. et al. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures. Sci. Rep. 4, 3826 (2014).
3. Li, H. M. et al. Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors. Sci. Rep. 4, 4041 (2014).
4. Mueller, T., Xia, F. N. A., Avouris, P. Graphene photodetectors for high-speed optical communications. Nat. Photonics 4, 297-301 (2010).
5. Konstantatos, G. et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol. 7, 363-368 (2012).
6. Fang, X. et al. An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability. Adv. Funct. Mater. 20, 500-508 (2010).
7. Fang, X. et al. New Ultraviolet Photodetector Based on Individual Nb2O5 Nanobelts. Adv. Funct. Mater. 21, 3907-3915 (2011).
8. Guo, F.W. et al. A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection. Nat. Nanotechnol. 7, 798-802 (2012).
9. Tsai, D. S. et al. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments. ACS Nano 7, 3905-3911 (2013).
10. Gan, X. T. et al. Chip-integrated ultrafast graphene photodetector with high responsivity. Nat. Photonics 7, 883-887 (2013).
11. Yin, Z. Y. et al. Single-Layer MoS2 Phototransistors. ACS Nano 6, 74-80 (2012).
12. Lemme, M. et al. Gate-activated photoresponse in a graphene p-n junction. Nano Lett. 11, 4134-4137 (2011).
13. Gabor, N. M. et al. Hot carrier-assisted intrinsic photoresponse in graphene. Science 334, 648-652 (2011).
14. Furchi, M. et al. Microcavity-Integrated Graphene Photodetector. Nano Lett. 12, 2773-2777 (2012).
15. Engel, M. et al. Light-matter interaction in a microcavity-controlled graphene transistor. Nat. Commun. 3, 906 (2012).
16. Liu, C. H., Chang, Y. C., Norris, T. B., Zhong, Z. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat. Nanotechnol. 9, 273-278 (2014).
17. Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., Kis, A. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8, 497-501 (2013).
18. Liu, Y., Yang, Q., Zhang, Y., Yang, Z. Y., Wang, Z. L. Nanowire Piezophototronic Photodetector: Theory and Experimental Design. Adv. Mater. 24, 1410-1417 (2012).
19. Hu, P. A., Wen, Z. Z., Wang, L. F., Tan, P. H., Xiao, K. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors. ACS Nano 6, 5988-5994 (2012).
20. Zhu, Z. Y., Cheng, Y. C., Schwingenschlogl, U. Topological Phase Transition in Layered GaS and GaSe. Phys. Rev. Lett. 108, 266805 (2012).
21. Lei, S. D. et al. Synthesis and Photoresponse of Large GaSe Atomic Layers. Nano Lett. 13, 2777-2781 (2013).
22. Schubert, O. et al. Sub-cycle control of terahertz high-harmonic generation by dynamical Bloch oscillations. Nat. Photonics 8, 119-123 (2014).
23. Kübler, C., Huber, R., Tübel, S., Leitenstorfer, A. Ultrabroadband detection of multi-terahertz field transients with GaSe electro-optic sensors: Approaching the near infrared. Appl. Phys. Lett. 85, 3360 (2004).
24. Wang, J. F., Gudiksen, M. S., Duan, X. F., Cui, Y., Lieber, C. M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science 293, 1455-1457 (2001).
25. Lee, E. J. H., Balasubramanian, K., Weitz, R. T., Burghard, M., Kern, K. Contact and edge effects in graphene devices. Nat. Nanotechnol. 3, 486-490 (2008).
26. Sobhani, A. et al. Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device. Nat. Commun. 4, 1643 (2013).
27. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
28. Bose, D. N., Pal, S. Schottky barriers on anisotropic semiconductor GaTe. Philos. Mag. B 75, 311-318 (1997).
29. Chitara, B., Panchakarla, L. S., Krupanidhi, S. B., Rao, C. N. R. Infrared Photodetectors Based on Reduced Graphene Oxide and Graphene Nanoribbons. Adv. Mater. 23, 5419 (2011).
30. Tang, L. et al. Nanometre-scale germanium photodetector enhanced by a nearinfrared dipole antenna. Nat. Photonics 2, 226-229 (2008).
31. Rose, A. Concepts in Photoconductivity and Allied Problems, Krieger Publishing Company, New York 1978.
32. Yang, S. et al. High performance few-layer GaS photodetector and its unique photo-response in different gas environments. Nanoscale 6, 2582-2587 (2014).
33. Kind, H., Yan, H. Q., Messer, B., Law, M., Yang, P. D. Nanowire ultraviolet photodetectors and optical switches. Adv. Mater. 14, 158 (2002).
34. Xia, F. N., Mueller, T., Lin, Y. M., Valdes-Garcia, A., Avouris, P. Ultrafast graphene photodetector. Nat. Nanotechnol. 4, 839-843 (2009).
35. Pospischil, A. et al. CMOS-compatible graphene photodetector covering all optical communication bands. Nat. Photonics 7, 892-896 (2013).