Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Birringer, Ryan P ^a   Lu, Ching Huang ^a   Deal, Michael ^a   Nishi, Yoshio ^a   Dauskardt, Reinhold H ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; BI-LAYER; BILAYER METAL GATE ELECTRODES; DIELECTRIC INTERFACE; FLAT-BAND VOLTAGE; FORMING GAS; FORMING GAS ANNEALING; FRACTURE PROPERTY; FRACTURE SURFACES; GATE ELECTRODES; INTERFACE CHARACTERIZATION; INTERFACE COMPOSITION; INTERFACE FRACTURE; INTERFACE FRACTURE ENERGY; METAL OXIDE SEMICONDUCTOR; PT FILMS; THICKNESS DEPENDENCE; TI DIFFUSION; WORK FUNCTION TUNING;

BRITTLENESS; FRACTURE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALS; MOS CAPACITORS; OXIDE FILMS; PLATINUM; POLYMER BLENDS; REFRACTORY METAL COMPOUNDS; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

PHASE INTERFACES;

EID: 77956793439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466957     Document Type: Article

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