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Volumn 7, Issue 33, 2015, Pages 14093-14099

Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets

(11) Huang, Yun a Deng, Hui Xiong b Wang, Feng a Xu, Kai a Wang, Zhen Xing a Wang, Qi Sheng a Wang, Feng Mei a Zhan, Xue Ying a Li, Shu Shen b Luo, Jun Wei b,c He, Jun a

a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; NANOSHEETS; OPTOELECTRONIC DEVICES; SEMICONDUCTING TIN COMPOUNDS; SULFUR COMPOUNDS;

AMBIENT CONDITIONS; CARBON CLOTHS; CVD METHOD; ELECTRICAL TRANSPORT MEASUREMENTS; HIGH QUALITY; ON-OFF RATIO; PERFORMANCE; RISING-TIME; SULPHURIZATION; THEORETICAL CALCULATIONS;

PHOTOTRANSISTORS;

EID: 84939145177 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr04174k Document Type: Article

Times cited : (124)

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