Role of Ga vacancy on a multilayer GaTe phototransistor

ACS Nano

Volumn 8, Issue 5, 2014, Pages 4859-4865

  Wang, Zhenxing ^a   Xu, Kai ^a   Li, Yuanchang ^a   Zhan, Xueying ^a   Safdar, Muhammad ^a   Wang, Qisheng ^a   Wang, Fengmei ^a   He, Jun ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

gallium telluride; layered materials; transistor; two dimensional; vacancy

Indexed keywords

CALCULATIONS; FIELD EFFECT TRANSISTORS; HYSTERESIS; MULTILAYERS; NANOSHEETS; PHOTOTRANSISTORS; TRANSISTORS;

ELECTRICAL TRANSPORT MEASUREMENTS; FIRST-PRINCIPLES CALCULATION; LARGE HYSTERESIS; LAYERED MATERIAL; LIQUID NITROGEN TEMPERATURE; OFF-STATE CURRENT; THERMALLY ACTIVATED; VARIABLE TEMPERATURE;

VACANCIES;

EID: 84901650194     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn500782n     Document Type: Article

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