Tin disulfide-an emerging layered metal dichalcogenide semiconductor: Materials properties and device characteristics

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10743-10755

  Huang, Yuan ^a   Sutter, Eli ^a   Sadowski, Jerzy T ^a   Cotlet, Mircea ^a   Monti, Oliver L A ^b   Racke, David A ^b   Neupane, Mahesh R ^c   Wickramaratne, Darshana ^c   Lake, Roger K ^c   Parkinson, Bruce A ^d   Sutter, Peter ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b University of Arizona   (United States)

^c University of California Riverside   (United States)

^d UNIVERSITY OF WYOMING   (United States)

Author keywords

2D materials; charge transport; field effect transistor; monolayer; photodetector; tin disulfide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; CHARGE TRANSFER; DEIONIZED WATER; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IV-VI SEMICONDUCTORS; MATERIALS PROPERTIES; METALS; MONOLAYERS; PHOTODETECTORS; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTONS; SEMICONDUCTING TIN COMPOUNDS; SILICA; SILICON; TIN COMPOUNDS;

AB INITIO CALCULATIONS; DEVICE CHARACTERISTICS; FIELD EFFECT TRANSPORT; INDIRECT BANDGAP SEMICONDUCTORS; PULSED IRRADIATION; STRUCTURE MEASUREMENT; SUBTHRESHOLD SWING; TIN DISULFIDES;

SULFUR COMPOUNDS;

EID: 84908433214     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504481r     Document Type: Article

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