High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes

Nanotechnology

Volumn 24, Issue 2, 2013, Pages

  De, Debtanu ^a   Manongdo, John ^a   See, Sean ^a   Zhang, Vincent ^a   Guloy, Arnold ^a   Peng, Haibing ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; LAYERED SEMICONDUCTORS; NANOELECTRONIC APPLICATIONS; ON/OFF RATIO;

ENERGY GAP; GRAPHENE;

FIELD EFFECT TRANSISTORS;

METAL NANOPARTICLE; SULFIDE; TIN DERIVATIVE; TIN SULFIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MEMBRANES, ARTIFICIAL; METAL NANOPARTICLES; PARTICLE SIZE; SULFIDES; TIN COMPOUNDS; TRANSISTORS, ELECTRONIC;

EID: 84871316288     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/2/025202     Document Type: Article

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