Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

Science and Technology of Advanced Materials

Volumn 16, Issue 3, 2015, Pages

  Andleeb, Shaista ^a   Kumar Singh, Arun ^a,b   Eom, Jonghwa ^a  

^a Sejong University   (South Korea)

^b MOTILAL NEHRU NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

doping; field effect transistor; molybdenum disulfide; p toluene sulfonic acid

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; MULTILAYERS; SULFUR COMPOUNDS; THRESHOLD VOLTAGE; TOLUENE;

ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARGES; FIELD-EFFECT MOBILITIES; MOLYBDENUM DISULFIDE; NEGATIVE GATE VOLTAGES; P-TOLUENE SULFONIC ACIDS; PTOLUENESULFONIC ACID; RAMAN SPECTROSCOPY MEASUREMENTS;

MOLYBDENUM COMPOUNDS;

EID: 84937951734     PISSN: 14686996     EISSN: 18785514     Source Type: Journal    
DOI: 10.1088/1468-6996/16/3/035009     Document Type: Article

References (34)

1. Lee C, Yan H, Brus L E, Heinz T F, Hone J and Ryu S 2010 Anomalous lattice vibrations of single- and few-layer MoS2 ACS Nano 4 2695-700
2. Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Single-layer MoS2 transistors Nat. Nanotechnol. 6 147-50
3. Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Two-dimensional gas of massless Dirac fermions in graphene Nature 438 197-200
4. Schwierz F 2010 Graphene transistors Nat. Nanotechnol. 5 487-96
5. Liao L, Lin Y C, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang K L, Huang Y and Duan X 2010 High-speed graphene transistors with a self-aligned nanowire gate Nature 467 305-8
6. Lin Y M et al 2011 Wafer-scale graphene integrated circuit Science 332 1294-7
7. Xia F, Mueller T, Lin Y M, Valdes-Garcia A and Avouris P 2009 Ultrafast graphene photodetector Nat. Nanotechnol. 4 839-43
8. Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Atomically thin MoS(2): a new direct-gap semiconductor Phys. Rev. Lett. 105 136805
9. Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G and Wang F 2010 Emerging photoluminescence in monolayer MoS2 Nano Lett. 10 1271-5
10. Ghatak S, Pal A N and Ghosh A 2011 Nature of electronic states in atomically thin MoS(2) field-effect transistors ACS Nano 5 7707-12
11. Liu H and Ye P D D 2012 MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric IEEE Electr. Device Lett. 33 546-8
12. Liu H, Gu J J and Ye P D 2012 MoS2 nanoribbon transistors: transition from depletion mode to enhancement mode by channel-width trimming IEEE Electr. Device Lett. 33 1273-5
13. Jariwala D, Sangwan V K, Late D J, Johns J E, Dravid V P, Marks T J, Lauhon L J and Hersam M C 2013 Band-like transport in high mobility unencapsulated single-layer MoS2 transistors Appl. Phys. Lett. 102 173107
14. Liu H, Si M, Najmaei S, Neal A T, Du Y, Ajayan P M, Lou J and Ye P D 2013 Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films Nano Lett. 13 2640-6
15. Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J and Palacios T 2012 Integrated circuits based on bilayer MoS2 transistors Nano Lett. 12 4674-80
16. Yu T, Lim B and Xia Y 2010 Aqueous-phase synthesis of single-crystal ceria nanosheets Angew. Chem. 49 4484-7
17. Matte H S, Gomathi A, Manna A K, Late D J, Datta R, Pati S K and Rao C N 2010 MoS2 and WS2 analogues of graphene Angew. Chem. 49 4059-62
18. Late D J, Liu B, Matte H S, Dravid V P and Rao C N 2012 Hysteresis in single-layer MoS2 field effect transistors ACS Nano 6 5635-41
19. Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nanotechnol. 7 699-712
20. Bertolazzi S, Krasnozhon D and Kis A 2013 Nonvolatile memory cells based on MoS2/graphene heterostructures ACS Nano 7 3246-52
21. Late D J et al 2013 Sensing behavior of atomically thin-layered MoS2 transistors ACS Nano 7 4879-91
22. Dhakal K P, Duong D L, Lee J, Nam H, Kim M, Kan M, Lee Y H and Kim J 2014 Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2 Nanoscale 6 13028-35
23. Choi M S, Qu D, Lee D, Liu X, Watanabe K, Taniguchi T and Yoo W J 2014 Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics ACS Nano 8 9332-40
24. Kim S et al 2012 High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals Nat. Commun. 3 1011
25. Mouri S, Miyauchi Y and Matsuda K 2013 Tunable photoluminescence of monolayer MoS2 via chemical doping Nano Lett. 13 5944-8
26. Fang H, Tosun M, Seol G, Chang T C, Takei K, Guo J and Javey A 2013 Degenerate n-doping of few-layer transition metal dichalcogenides by potassium Nano Lett. 13 1991-5
27. Shi Y, Huang J K, Jin L, Hsu Y T, Yu S F, Li L J and Yang H Y 2013 Selective decoration of Au nanoparticles on monolayer MoS2 single crystals Sci. Rep. 3 1839
28. Li Y, Xu C Y, Hu P and Zhen L 2013 Carrier control of MoS2 nanoflakes by functional self-assembled monolayers ACS Nano 7 7795-804
29. Singh A K, Andleeb S, Singh J, Dung H T, Seo Y and Eom J 2014 Ultraviolet-light-induced reversible and stable carrier modulation in MoS2 field-effect transistors Adv. Funct. Mater. 24 7125-32
30. Singh A K, Ahmad M, Singh V K, Shin K, Seo Y and Eom J 2013 Tailoring the electrical properties of graphene layers by molecular doping ACS Appl. Mater. Interfaces 5 5276-81
31. Singh A K, Iqbal M W, Singh V K, Iqbal M Z, Lee J H, Chun S H, Shin K and Eom J 2012 Molecular n-doping of chemical vapor deposition grown graphene J. Mater. Chem. 22 15168-74
32. Han S W et al 2011 Band-gap transition induced by interlayer van der Waals interaction in MoS2 Phys. Rev. B 84 045409
33. Kiriya D, Tosun M, Zhao P, Kang J S and Javey A 2014 Air-stable surface charge transfer doping of MoS(2) by benzyl viologen J. Am. Chem. Soc. 136 7853-6
34. Yu L et al 2014 Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics Nano Lett. 14 3055-63