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Advanced Functional Materials

Volumn 24, Issue 45, 2014, Pages 7125-7132

Ultraviolet-light-induced reversible and stable carrier modulation in MoS2 field-effect transistors

(6) Singh, Arun Kumar a Andleeb, Shaista a Singh, Jai a Dung, Hoang Tien a Seo, Yongho a Eom, Jonghwa a

a Sejong University (South Korea)

Author keywords

Charge transport; Doping; Field effect; Molybdenum disulfide; Ultraviolet light

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE TRANSFER; DOPING (ADDITIVES); DRAIN CURRENT; GASES; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSISTORS; ULTRAVIOLET RADIATION;

CARRIER MODULATION; CHARGE-CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT; MOLYBDENUM DISULFIDE; NEGATIVE GATE VOLTAGES; ULTRA-VIOLET LIGHT;

FIELD EFFECT TRANSISTORS;

EID: 84918794518 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201402231 Document Type: Article

Times cited : (50)

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