Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

ACS Nano

Volumn 9, Issue 6, 2015, Pages 6619-6625

  Liu, Hongjun ^a   Zheng, Hao ^a,b   Yang, Fang ^b   Jiao, Lu ^a   Chen, Jinglei ^a   Ho, Wingkin ^a   Gao, Chunlei ^b   Jia, Jinfeng ^b   Xie, Maohai ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

2D materials; defects; MBE; MoSe2 bilayer; STM S

Indexed keywords

DEFECTS; ELECTRIC FIELDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; POINT DEFECTS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY;

BI-LAYER; BOTTOM LAYERS; COMMON FEATURES; INVERSION DOMAIN BOUNDARIES; QUANTUM TUNNELING; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; STM/S; ULTRATHIN LAYERS;

SELENIUM COMPOUNDS;

EID: 84934890913     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02789     Document Type: Article

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