Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer

ACS Nano

Volumn 9, Issue 5, 2015, Pages 5189-5197

  Lin, Junhao ^a,b   Pantelides, Sokrates T ^a,b   Zhou, Wu ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

defect dynamics; grain boundaries; inversion domain; transition metal dichalcogenide; vacancy

Indexed keywords

ATOMS; DENSITY FUNCTIONAL THEORY; ELECTRON BEAMS; GRAIN BOUNDARIES; LATTICE THEORY; MONOLAYERS; NUCLEATION; SEMICONDUCTING SELENIUM COMPOUNDS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

DEFECT DYNAMICS; FORMATION MECHANISM; INVERSION DOMAINS; NUCLEATION AND GROWTH; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SEMICONDUCTING TRANSITION; STRUCTURAL EVOLUTION; TRANSITION METAL DICHALCOGENIDES;

GRAIN GROWTH;

EID: 84930226231     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00554     Document Type: Article

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