메뉴 건너뛰기




Volumn 2, Issue 3, 2015, Pages

Molecular-beam epitaxy of monolayer and bilayer WSe2: A scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

Author keywords

2D crystal; Exciton; MBE,STM S; Photoluminescence; WSe2

Indexed keywords

BINDING ENERGY; DEFECTS; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METALS;

EID: 84934980967     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/3/034004     Document Type: Article
Times cited : (167)

References (30)
  • 1
    • 84869074729 scopus 로고    scopus 로고
    • Coleman JNand Strano MS 2012 Electronics and optoelectronics of twodimensional transition metal dichalcogenides
    • Wang QH, Kalantar-Zadeh K, Kis A, Coleman JNand Strano MS 2012 Electronics and optoelectronics of twodimensional transition metal dichalcogenides Nat. Nanotechnol. 7 699-712
    • Nat. Nanotechnol , vol.7 , pp. 699-712
    • Wang, Q.H.1    Kalantar-Zadeh, K.2    Kis, A.3
  • 3
    • 0035538654 scopus 로고    scopus 로고
    • Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2
    • Peng Y Y, Meng Z Y, Zhong C, Lu J, Yu WC, Jia Y B and Qian Y T 2001 Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2 Chem. Lett. 30 772-3
    • (2001) Chem. Lett , vol.30 , pp. 772-773
    • Peng, Y.Y.1    Meng, Z.Y.2    Zhong, C.3    Lu, J.4    Yu, W.C.5    Jia, Y.B.6    Qian, Y.T.7
  • 4
    • 84860329324 scopus 로고    scopus 로고
    • Synthesis of large-area MoS2 atomic layers with chemical vapor deposition
    • Lee Y-H et al 2012 Synthesis of large-area MoS2 atomic layers with chemical vapor deposition Adv. Mater. 24 2320-5
    • (2012) Adv. Mater , vol.24 , pp. 2320-2325
    • Lee, Y.-H.1
  • 6
    • 84893714290 scopus 로고    scopus 로고
    • Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
    • Zhang Y et al 2014 Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Nat. Nanotechnol. 9 111-5
    • (2014) Nat. Nanotechnol , vol.9 , pp. 111-115
    • Zhang, Y.1
  • 7
    • 84906052584 scopus 로고    scopus 로고
    • Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations
    • Liu H et al 2014 Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations Phys. Rev. Lett. 113 066105
    • (2014) Phys. Rev. Lett , vol.113
    • Liu, H.1
  • 9
    • 84925596852 scopus 로고    scopus 로고
    • Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe2
    • Lehtinen O et al V 2015 Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe2 ACS Nano 9 3274-83
    • (2015) ACS Nano , vol.9 , pp. 3274-3283
    • Lehtinen, O.1
  • 10
    • 85027940328 scopus 로고    scopus 로고
    • Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
    • Ugeda MM et al 2014 Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor Nat. Mater. 13 1091-5
    • (2014) Nat. Mater , vol.13 , pp. 1091-1095
    • Ugeda, M.M.1
  • 11
  • 12
    • 84930008333 scopus 로고    scopus 로고
    • Molecular-beam epitaxy of monolayer MoSe2: Growth characteristics and domain boundary formation
    • Jiao L et al 2015 Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation New J. Phys. 17 053023
    • (2015) New J. Phys , vol.17
    • Jiao, L.1
  • 14
    • 84924940117 scopus 로고    scopus 로고
    • Exciton binding energy of monolayerWS2
    • Zhu B, Chen X and Cui XD 2015 Exciton binding energy of monolayerWS2 Sci. Rep. 5 9218
    • (2015) Sci. Rep , vol.5 , pp. 9218
    • Zhu, B.1    Chen, X.2    Cui, X.D.3
  • 15
    • 84934966134 scopus 로고    scopus 로고
    • Electronic structures and theoretical modelling of two-dimensional group- VIBtransitionmetal dichalcogenides
    • Liu G-B, Xiao D, Yao YG, Xu XD and Yao W 2015 Electronic structures and theoretical modelling of two-dimensional group- VIBtransitionmetal dichalcogenides Chem. Soc.Rev. 44 2643-63
    • (2015) Chem. Soc.Rev , vol.44 , pp. 2643-2663
    • Liu, G.-B.1    Xiao, D.2    Yao, Y.G.3    Xu, X.D.4    Yao, W.5
  • 17
    • 84874582246 scopus 로고    scopus 로고
    • Electrical control of neutral and charged excitons in a monolayer semiconductor
    • Ross J S et al 2013 Electrical control of neutral and charged excitons in a monolayer semiconductor Nat. Commun. 4 1474
    • (2013) Nat. Commun , vol.4 , pp. 1474
    • Ross, J.S.1
  • 18
    • 84888107960 scopus 로고    scopus 로고
    • Optical spectrum of MoS2: Many-body effects and diversity of exciton states
    • Qiu DY, da Jornada FHand Louie SG 2013 Optical spectrum of MoS2: many-body effects and diversity of exciton states Phys. Rev. Lett. 111 216805
    • (2013) Phys. Rev. Lett , vol.111
    • Qiu, D.Y.1    Da Jornada, F.H.2    Louie, S.G.3
  • 19
    • 84861643796 scopus 로고    scopus 로고
    • Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
    • Cheiwchanchamnangij T and Lambrecht WR L 2012 Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 Phys. Rev. B 85 205302
    • (2012) Phys. Rev. B , vol.85
    • Cheiwchanchamnangij, T.1    Lambrecht, W.R.L.2
  • 20
    • 84866429144 scopus 로고    scopus 로고
    • Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
    • Ramasubramaniam A 2012 Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides Phys. Rev. B 86 115409
    • (2012) Phys. Rev. B , vol.86
    • Ramasubramaniam, A.1
  • 21
    • 84871087159 scopus 로고    scopus 로고
    • Effects of confinement and environment on the electronic structure and exciton binding energy ofMoS2 fromfirst principles
    • Komsa H-P and Krasheninnikov AV 2012 Effects of confinement and environment on the electronic structure and exciton binding energy ofMoS2 fromfirst principles Phys.Rev.B86 241201
    • (2012) Phys.Rev.B , vol.86
    • Komsa, H.-P.1    Krasheninnikov, A.V.2
  • 26
    • 84900485583 scopus 로고    scopus 로고
    • Direct imaging of band profile in single layer MoS2 on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending
    • Zhang C, Johnson A, Hsu C-L, Li L-J and Shih C-K 2014 Direct imaging of band profile in single layer MoS2 on graphite: Quasiparticle energy gap, metallic edge states, and edge band bending Nano Lett. 14 2443-7
    • (2014) Nano Lett , vol.14 , pp. 2443-2447
    • Zhang, C.1    Johnson, A.2    Hsu, C.-L.3    Li, L.-J.4    Shih, C.-K.5
  • 29
    • 0021372595 scopus 로고
    • Excitons in GaAs quantum wells
    • Miller RCand Kleinman DA 1985 Excitons in GaAs quantum wells J. Lumin. 30 520-40
    • (1985) J. Lumin , vol.30 , pp. 520-540
    • Miller, R.C.1    Kleinman, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.