Molecular-beam epitaxy of monolayer MoSe2: Growth characteristics and domain boundary formation

New Journal of Physics

Volumn 17, Issue , 2015, Pages

  Jiao, L ^a   Liu, H J ^a   Chen, J L ^a   Yi, Y ^b   Chen, W G ^c   Cai, Y ^b   Wang, J N ^b   Dai, X Q ^c,d   Wang, N ^b   Ho, W K ^a   Xie, M H ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c ZHENGZHOU NORMAL UNIVERSITY   (China)

^d HENAN NORMAL UNIVERSITY   (China)

Author keywords

domain boundary; molecular beam epitaxy; MoSe2; surface nucleation; transition metal dichalcogenides; van der waals epitaxy

Indexed keywords

MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSITION METALS; VAN DER WAALS FORCES;

DOMAIN BOUNDARY; MOSE2; SURFACE NUCLEATION; TRANSITION METAL DICHALCOGENIDES; VAN DER WAALS EPITAXY;

MONOLAYERS;

EID: 84930008333     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/17/5/053023     Document Type: Article

References (31)

1. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109-62
2. Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotechnol. 7 699-712
3. Xu X D, Yao W, Xiao D and Heinz T F 2014 Nat. Phys. 10 343-50
4. Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147-50
5. Lee C H et al 2014 Nat. Nanotechnol. 9 676-81
6. Xiao D, Liu G B, Feng W X, Xu X D and Yao W 2012 Phys. Rev. Lett. 108 196802
7. Zibouche N, Philipsen P, Kuc A and Heine T 2014 Phys. Rev. B 90 125440
8. Wu S F, Huang C M, Aivazian G, Ross J S, Cobden D H and Xu X D 2013 ACS Nano 7 2768-72
9. Wilson J A and Yoffe A D 1969 Adv. Phys. 18 193-335
10. Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V and Geim A K 2005 Proc. Natl Acad. Sci. USA 102 10451-3
11. Lee Y H, Zhang X Q, Zhang W J, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T W, Chang C S and Li L J 2012 Adv. Mat. 24 2320-5
12. van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R and Muller D A 2013 Nat. Mat. 12 554-61
13. Zhang Y et al 2014 Nat. Nanotechnol. 9 111-5
14. Liu H J et al 2014 Phys. Rev. Lett. 113 066105
15. Zhang C D, Chen Y X, Johnson A, Li M Y, Huang J K, Li L J and Shih C-K 2014 (arXiv1412.8487)
16. Ohuchi F S, Parkinson B A, Ueno K and Koma A 1990 J. Appl. Phys. 68 2168-75
17. Koma A 1999 J. Cryst. Growth 201 236-41
18. Ohuchi F S, Shimada T, Parkinson B A, Ueno K and Koma A 1991 J. Cryst. Growth 111 1033-7
19. Xie X N, Wang H Q, Wee A T S and Loh K P 2001 Surf. Sci. 478 57-71
20. Hass J, de Heer W A and Conrad E H 2008 J. Phys.: Condens. Matter. 20 323202
21. Saidi W A 2014 Cryst. Growth Des. 14 4920-8
22. Tenne R 1995 Adv. Mat. 7 965-95
23. Markov I V 2003 Crystal growth for beginners: fundamentals of nuclueation Crystal Growth, and Epitaxy 2nd edn (Singapore: World Scientific)
24. Helveg S, Lauritsen J V, Lægsgaard E, Stensgaard I, Nørskov J K, Clausen B S, Topsøe H and Besenbach F 2000 Phys. Rev. Lett. 84 951-4
25. Bollinger M V, Jacobsen K W and Nørskov J K 2003 Phys. Rev. B 67 085410
26. Xie M H, Seutter S M, Zhu W K, Zheng L X, Wu H S and Tong S Y 1996 Phys. Rev. Lett. 82 2749-52
27. Michely T and Krug J 2004 Islands, Mounds and Atoms: Patterns and Processes in Crystal Growth Far From Equilibrium (Heidelberg: Springer)
28. Mori T, Abe H, Saiki K and Koma A 1993 Japan. J. Appl. Phys. 32 2945-9
29. Murata H and Koma A 1999 Phys. Rev. B 59 10327
30. Bollinger M V, Lauritsen J V, Jacobsen K W, Nørskov J K, Helveg S and Besenbacher F 2001 Phys. Rev. Lett. 87 196803
31. Liu H J, Jiao L, Xie L, Yang F, Chen J L, Ho W K, Gao C L, Jia J F, Cui X D and Xie M H 2015 (Unpublished)