Controlled charge switching on a single donor with a scanning tunneling microscope

Physical Review Letters

Volumn 101, Issue 7, 2008, Pages

  Teichmann, K ^a   Wenderoth, M ^a   Loth, S ^a   Ulbrich, R G ^a   Garleff, J K ^b   Wijnheijmer, A P ^b   Koenraad, P M ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; EXCAVATION; IMPURITIES; NONMETALS; SCANNING; SEMICONDUCTOR MATERIALS; SILICON; TUNNELING (EXCAVATION);

CHARGE STATES; COULOMB POTENTIALS; IONIZED STATES; LOW TEMPERATURE; SCANNING TUNNELING MICROSCOPES; SWITCHING PROCESS; ULTRASHARP TIPS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49749105901     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.076103     Document Type: Article

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