Atomic scale microstructure and properties of se-deficient two-dimensional MoSe2

ACS Nano

Volumn 9, Issue 3, 2015, Pages 3274-3283

  Lehtinen, Ossi ^a   Komsa, Hannu Pekka ^b   Pulkin, Artem ^c   Whitwick, Michael Brian ^c   Chen, Ming Wei ^c   Lehnert, Tibor ^a   Mohn, Michael J ^a   Yazyev, Oleg V ^c   Kis, Andras ^c   Kaiser, Ute ^a   Krasheninnikov, Arkady V ^b  

^a UNIVERSITY OF ULM   (Germany)

^b AALTO UNIVERSITY   (Finland)

^c EPFL   (Switzerland)

Author keywords

2D TMD; CVD; defects; DFT; HRTEM; MBE; microstructure; stoichiometry

Indexed keywords

ATOMS; BOND (MASONRY); CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DEFECTS; DENSITY FUNCTIONAL THEORY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MOLYBDENUM COMPOUNDS; STOICHIOMETRY; TRANSITION METALS;

2D TMD; BAND-BENDING EFFECTS; HRTEM; MICROSTRUCTURE AND PROPERTIES; STOICHIOMETRIC COMPOSITIONS; THERMODYNAMICALLY STABLE; TRANSITION METAL DICHALCOGENIDES; TWO DIMENSIONAL (2 D);

SELENIUM COMPOUNDS;

EID: 84925596852     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00410     Document Type: Article

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