Enhanced donor binding energy close to a semiconductor surface

Physical Review Letters

Volumn 102, Issue 16, 2009, Pages

  Wijnheijmer, A P ^a   Garleff, J K ^a   Teichmann, K ^b   Wenderoth, M ^b   Loth, S ^b   Ulbrich, R G ^b   Maksym, P A ^c   Roy, M ^c   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c UNIVERSITY OF LEICESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS APPROACHES; GALLIUM ARSENIDES; IONIZATION THRESHOLDS; SEMI-CONDUCTOR SURFACES; VACUUM INTERFACES;

ARSENIC COMPOUNDS; ATOMS; BINDING SITES; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; IMPURITIES; IONIZATION; NUCLEAR ENERGY; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS;

BINDING ENERGY;

EID: 65549089578     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.166101     Document Type: Article

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