Study of electrical characteristics of GaN-based photovoltaics with graded InxGa1-x N absorption layer

IEEE Photonics Technology Letters

Volumn 23, Issue 6, 2011, Pages 347-349

  Lee, Han Cheng ^a   Su, Yan Kuin ^b   Lan, Wen How ^c   Lin, Jia Ching ^d   Huang, Kuo Chin ^e   Lin, Wen Jen ^d   Cheng, Yi Cheng ^d   Yeh, Yu Han ^b  

^a AU OPTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Graded InxGa1 xN absorption layer (GIAL); photovoltaics (PVs); single InGaN absorption layer (SIAL)

Indexed keywords

ABSORPTION LAYER; BAND OFFSETS; CARRIER TRANSPORTATION; ELECTRICAL CHARACTERISTIC; FILL FACTOR; ONE-SUN ILLUMINATION; PHOTOVOLTAICS; PHOTOVOLTAICS (PVS); POWER CONVERSION EFFICIENCIES; SINGLE INGAN ABSORPTION LAYER (SIAL);

CONVERSION EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE MISMATCH; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS;

ABSORPTION;

EID: 79952152268     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2103304     Document Type: Article

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