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Volumn 100, Issue 11, 2012, Pages

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER STRUCTURES; BARRIER THICKNESS; INDUCED ELECTRIC FIELDS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LOWER ENERGIES; PIEZOELECTRIC POLARIZATIONS; POWER CONVERSION EFFICIENCIES; TRANSITION ENERGY;

EID: 84859947921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3695170     Document Type: Article
Times cited : (69)

References (27)
  • 8
    • 80053551009 scopus 로고    scopus 로고
    • The International Society for Optical Engineering, San Diego, California, USA, 22 August 2011, edited by K. Vansant and R. A. Sherif (SPIE, Bellingham, WA)
    • M. Wiemer, V. Sabnis, and H. Yuen, in High and Low Concentrator Systems for Solar Electric Applications VI: Proceedings of SPIE, The International Society for Optical Engineering, San Diego, California, USA, 22 August 2011, edited by, K. Vansant and, R. A. Sherif, (SPIE, Bellingham, WA, 2011), p. 810804.
    • (2011) High and Low Concentrator Systems for Solar Electric Applications VI: Proceedings of SPIE , pp. 810804
    • Wiemer, M.1    Sabnis, V.2    Yuen, H.3
  • 14
    • 84859981678 scopus 로고    scopus 로고
    • Suedmaehrenstr. 21, D-85586 Poing, Germany
    • nextnano, Suedmaehrenstr. 21, D-85586 Poing, Germany.
    • Nextnano
  • 25
    • 0001495657 scopus 로고    scopus 로고
    • 10.1063/1.366114
    • A. F. Wright, J. Appl. Phys. 82, 2833 (1997). 10.1063/1.366114
    • (1997) J. Appl. Phys. , vol.82 , pp. 2833
    • Wright, A.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.