SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

Barrier thickness dependence of photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

(5) Watanabe, Noriyuki a Yokoyama, Haruki a Shigekawa, Naoteru a,c Sugita, Ken Ichi b Yamamoto, Akio b

a NTT CORPORATION (Japan)

b UNIVERSITY OF FUKUI (Japan)

c Osaka Prefecture University (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BARRIER LAYERS; BARRIER THICKNESS; CARRIER TUNNELING; IDEALITY FACTORS; INGAN/GAN; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTOVOLTAIC CHARACTERISTICS; SOLAR CELL PERFORMANCE;

OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84869131229 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.10ND10 Document Type: Article

Times cited : (32)

References (30)

1
- 79956041003
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff: Appl. Phys. Lett. 80 (2002) 4741
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4741
- Wu, J.¹ Walukiewicz, W.² Yu, K.M.³ Ager Iii, J.W.⁴ Haller, E.E.⁵ Lu, H.⁶ Schaff, W.J.⁷

2
- 3342900182
- W. Walukiewicz, S. X. Li, J. Wu, K. M. Yu, J. W. Ager III, E. E. Haller, H Lu, and W. J. Schaff: J. Cryst. Growth 269 (2004) 119
- (2004) J. Cryst. Growth , vol.269 , pp. 119
- Walukiewicz, W.¹ Li, S.X.² Wu, J.³ Yu, K.M.⁴ Ager Iii, J.W.⁵ Haller, E.E.⁶ Lu, H.⁷ Schaff, W.J.⁸

3
- 58149251885
- R. E. Jones, R. Broesler, K. M. Yu, J. W. Ager III, E. E. Haller, W Walukiewicz, X. Chen, and W. J. Schaff: J. Appl. Phys. 104 (2008) 123501
- (2008) J. Appl. Phys. , vol.104 , pp. 123501
- Jones, R.E.¹ Broesler, R.² Yu, K.M.³ Ager Iii, J.W.⁴ Haller, E.E.⁵ Walukiewicz, W.⁶ Chen, X.⁷ Schaff, W.J.⁸

4
- 79952456849
- A. Yamamoto, Md. R. Islam, T.-T. Kang, and A. Hashimoto: Phys. Status Solidi C 7 (2010) 1309
- (2010) Phys. Status Solidi , vol.C 7 , pp. 1309
- Yamamoto, A.¹ Islam, M.R.² Kang, T.-T.³ Hashimoto, A.⁴

5
- 34848905285
- O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz: Appl. Phys. Lett. 91 (2007) 132117
- (2007) Appl. Phys. Lett. , vol.91 , pp. 132117
- Jani, O.¹ Ferguson, I.² Honsberg, C.³ Kurtz, S.⁴

6
- 53749099094
- C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K Mishra: Appl. Phys. Lett. 93 (2008) 143502
- (2008) Appl. Phys. Lett. , vol.93 , pp. 143502
- Neufeld, C.J.¹ Toledo, N.G.² Cruz, S.C.³ Iza, M.⁴ Denbaars, S.P.⁵ Mishra, U.K.⁶

7
- 58149229131
- X. Zheng, R. H. Horng, D. S. Wuu, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu: Appl. Phys. Lett. 93 (2008) 261108
- (2008) Appl. Phys. Lett. , vol.93 , pp. 261108
- Zheng, X.¹ Horng, R.H.² Wuu, D.S.³ Chu, M.T.⁴ Liao, W.Y.⁵ Wu, M.H.⁶ Lin, R.M.⁷ Lu, Y.C.⁸

8
- 62549121579
- J. K. Sheu, C. C. Yang, S. J. Tu, K. H. Chang, M. L. Lee, W. C. Lai, and L. C. Peng: IEEE Electron Device Lett. 30 (2009) 225
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 225
- Sheu, J.K.¹ Yang, C.C.² Tu, S.J.³ Chang, K.H.⁴ Lee, M.L.⁵ Lai, W.C.⁶ Peng, L.C.⁷

9
- 68849118422
- S. W. Zeng, B. P. Zhang, J. W. Sun, J. F. Cai, C. Chen, and J. Z. Yu: Semicond. Sci. Technol. 24 (2009) 055009
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 055009
- Zeng, S.W.¹ Zhang, B.P.² Sun, J.W.³ Cai, J.F.⁴ Chen, C.⁵ Yu, J.Z.⁶

10
- 67650435785
- R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu: IEEE Electron Device Lett. 30 (2009) 724
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 724
- Horng, R.H.¹ Lin, S.T.² Tsai, Y.L.³ Chu, M.T.⁴ Liao, W.Y.⁵ Wu, M.H.⁶ Lin, R.M.⁷ Lu, Y.C.⁸

11
- 70350702606
- X. M. Cai, S. W. Zeng, and B. P. Zhang: Appl. Phys. Lett. 95 (2009) 173504
- (2009) Appl. Phys. Lett. , vol.95 , pp. 173504
- Cai, X.M.¹ Zeng, S.W.² Zhang, B.P.³

12
- 70149089427
- M. J. Jeng, Y. L. Lee, and L. B. Chang: J. Phys. D 42 (2009) 105101
- (2009) J. Phys. , vol.D 42 , pp. 105101
- Jeng, M.J.¹ Lee, Y.L.² Chang, L.B.³

13
- 60349107985
- R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang: Appl. Phys. Lett. 94 (2009) 063505
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063505
- Dahal, R.¹ Pantha, B.² Li, J.³ Lin, J.Y.⁴ Jiang, H.X.⁵

14
- 77949299503
- C. L. Tsai, G. S. Liu, G. C. Fan, and Y. S. Lee: Solid-State Electron. 54 (2010) 541
- (2010) Solid-State Electron. , vol.54 , pp. 541
- Tsai, C.L.¹ Liu, G.S.² Fan, G.C.³ Lee, Y.S.⁴

15
- 77749307399
- S. W. Zeng, X. M. Cai, and B. P. Zhang: IEEE J. Quantum Electron. 46 (2010) 783
- (2010) IEEE J. Quantum Electron. , vol.46 , pp. 783
- Zeng, S.W.¹ Cai, X.M.² Zhang, B.P.³

16
- 76449100118
- J. J. Wierer, A. J. Fischer, and D. D. Koleske: Appl. Phys. Lett. 96 (2010) 051107
- (2010) Appl. Phys. Lett. , vol.96 , pp. 051107
- Wierer, J.J.¹ Fischer, A.J.² Koleske, D.D.³

17
- 77749246078
- K. Y. Lai, G. J. Lin, Y.-L. Lai, Y. F. Chen, and J. H. He: Appl. Phys. Lett 96 (2010) 081103
- (2010) Appl. Phys. Lett , vol.96 , pp. 081103
- Lai, K.Y.¹ Lin, G.J.² Lai, Y.-L.³ Chen, Y.F.⁴ He, J.H.⁵

18
- 77951594861
- I. M. Pryce, D. D. Koleske, A. J. Fischer, and H. A. Atwater: Appl. Phys Lett. 96 (2010) 153501
- (2010) Appl. Phys Lett. , vol.96 , pp. 153501
- Pryce, I.M.¹ Koleske, D.D.² Fischer, A.J.³ Atwater, H.A.⁴

19
- 72949122558
- B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T Ferguson, and C. B. Honsberg: IEEE Electron Device Lett. 31 (2010) 32
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 32
- Jampana, B.R.¹ Melton, A.G.² Jamil, M.³ Faleev, N.N.⁴ Opila, R.L.⁵ Ferguson, I.T.⁶ Honsberg, C.B.⁷

20
- 84862681883
- M. J. Jeng, T. W. Su, Y. L. Lee, Y. H. Chang, L. B. Chang, R. M. Lin, J. H Jiang, and Y. C. Lu: Jpn. J. Appl. Phys. 49 (2010) 052302
- (2010) Jpn. J. Appl. Phys. , vol.49 , pp. 052302
- Jeng, M.J.¹ Su, T.W.² Lee, Y.L.³ Chang, Y.H.⁴ Chang, L.B.⁵ Lin, R.M.⁶ Jiang, J.H.⁷ Lu, Y.C.⁸

21
- 77953588109
- R. H. Horng, M. T. Chu, H. R. Chen, W. Y. Liao, M. H. Wu, K. F. Chen, and D. S. Wuu: IEEE Electron Device Lett. 31 (2010) 585
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 585
- Horng, R.H.¹ Chu, M.T.² Chen, H.R.³ Liao, W.Y.⁴ Wu, M.H.⁵ Chen, K.F.⁶ Wuu, D.S.⁷

22
- 77955152859
- C. C. Yang, J. K. Sheu, X. W. Liang, M. S. Huang, M. L. Lee, K. H Chang, S. J. Tu, F. W. Huang, and W. C. Lai: Appl. Phys. Lett. 97 (2010) 021113
- (2010) Appl. Phys. Lett. , vol.97 , pp. 021113
- Yang, C.C.¹ Sheu, J.K.² Liang, X.W.³ Huang, M.S.⁴ Lee, M.L.⁵ Chang, K.H.⁶ Tu, S.J.⁷ Huang, F.W.⁸ Lai, W.C.⁹

23
- 77956022288
- R. Dahal, J. Li, K. Aryal, J. Y. Lin, and H. X. Jiang: Appl. Phys. Lett. 97 (2010) 073115
- (2010) Appl. Phys. Lett. , vol.97 , pp. 073115
- Dahal, R.¹ Li, J.² Aryal, K.³ Lin, J.Y.⁴ Jiang, H.X.⁵

24
- 77957585302
- J. P. Shim, S. R. Jeon, Y. K. Jeong, and D. S. Lee: IEEE Electron Device Lett. 31 (2010) 1140
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1140
- Shim, J.P.¹ Jeon, S.R.² Jeong, Y.K.³ Lee, D.S.⁴

25
- 79952152268
- H. C. Lee, Y. K. Su, W. H. Lan, J. C. Lin, K. C. Huang, W. J. Lin, Y. C Cheng, and Y. H. Yeh: IEEE Photonics Technol. Lett. 23 (2011) 347
- (2011) IEEE Photonics Technol. Lett. , vol.23 , pp. 347
- Lee, H.C.¹ Su, Y.K.² Lan, W.H.³ Lin, J.C.⁴ Huang, K.C.⁵ Lin, W.J.⁶ Cheng, Y.C.⁷ Yeh, Y.H.⁸

26
- 79953749725
- J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck: Appl. Phys. Lett. 98 (2011) 131115
- (2011) Appl. Phys. Lett. , vol.98 , pp. 131115
- Lang, J.R.¹ Neufeld, C.J.² Hurni, C.A.³ Cruz, S.C.⁴ Matioli, E.⁵ Mishra, U.K.⁶ Speck, J.S.⁷

27
- 78549260342
- Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano: Appl. Phys. Express 3 (2010) 111001
- (2010) Appl. Phys. Express , vol.3 , pp. 111001
- Kuwahara, Y.¹ Fujii, T.² Fujiyama, Y.³ Sugiyama, T.⁴ Iwaya, M.⁵ Takeuchi, T.⁶ Kamiyama, S.⁷ Akasaki, I.⁸ Amano, H.⁹

28
- 79951647276
- Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano: Appl. Phys. Express 4 (2011) 021001
- (2011) Appl. Phys. Express , vol.4 , pp. 021001
- Kuwahara, Y.¹ Fujii, T.² Sugiyama, T.³ Iida, D.⁴ Isobe, Y.⁵ Fujiyama, Y.⁶ Morita, Y.⁷ Iwaya, M.⁸ Takeuchi, T.⁹ Kamiyama, S.¹⁰ Akasaki, I.¹¹ Amano, H.¹²

29
- 0036712442
- X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker: IEEE Electron Device Lett. 23 (2002) 535
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 535
- Cao, X.A.¹ Stokes, E.B.² Sandvik, P.M.³ Leboeuf, S.F.⁴ Kretchmer, J.⁵ Walker, D.⁶

30
- 34047102071
- R. Mahapatra, A. K. Chakraborty, N. Poolamai, A. Horsfall, S Chattopadhyay, N. G. Wright, K. S. Coleman, P. G. Coleman, and C. P Burrows: J. Vac. Sci. Technol. B 25 (2007) 217
- (2007) J. Vac. Sci. Technol. , vol.B 25 , pp. 217
- Mahapatra, R.¹ Chakraborty, A.K.² Poolamai, N.³ Horsfall, A.⁴ Chattopadhyay, S.⁵ Wright, N.G.⁶ Coleman, K.S.⁷ Coleman, P.G.⁸ Burrows, C.P.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.