InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: Case studies

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 3, 2013, Pages 350-354

  Mukhtarova, Anna ^a   Valdueza Felip, Sirona ^a   Durand, Christophe ^a   Pan, Qing ^a   Grenet, Louis ^a   Peyrade, David ^b   Bougerol, Catherine ^a   Chikhaoui, Walf ^a   Monroy, Eva ^a   Eymery, Joël ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

InGaN based solar cells; MOVPE; Multi quantum wells

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING; EXTERNAL QUANTUM EFFICIENCY; INGAN/GAN; METAL-ORGANIC VAPOUR PHASE EPITAXY; MULTIQUANTUM WELLS; STRAINED QUANTUM WELLS; SUPERLATTICE PERIODS;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SURFACE MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SOLAR CELLS;

EID: 84874956163     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200682     Document Type: Article

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