Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

Applied Physics Letters

Volumn 106, Issue 21, 2015, Pages

  Connie, Ashfiqua Tahseen ^a   Zhao, Songrui ^a   Sadaf, Sharif Md ^a   Shih, Ishiang ^a   Mi, Zetian ^a   Du, Xiaozhang ^b   Lin, Jingyu ^b   Jiang, Hongxing ^b  

^a MCGILL UNIVERSITY   (Canada)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; NANOWIRES;

BAND EDGE TRANSITION; ELECTRICAL CONDUCTION; FREE HOLE CONCENTRATION; HOPPING CONDUCTION; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE CONDUCTION; ROOM TEMPERATURE; TEMPERATURE RANGE;

ACTIVATION ENERGY;

EID: 84930644707     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4921626     Document Type: Article

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