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Journal of Alloys and Compounds

Volumn 624, Issue , 2015, Pages 241-246

Effect of Mg doping on growth and photoluminescence of AlN hexagonal nanorods

(8) Hu, Hairong a Wu, Zhiguo a Zhang, Weibo a Li, Huajun a Zhuo, Renfu a Yan, De a Wang, Jun a,b Yan, Pengxun a,b

a LANZHOU UNIVERSITY (China)

b LANZHOU INSTITUTE OF CHEMICAL PHYSICS (China)

Author keywords

Al N ratio; AlN nanorods; Growth rate; Mg doping; Photoluminescence; Point defects

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; GROWTH RATE; NANORODS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS;

ALN; BROAD EMISSION BANDS; MG INCORPORATION; MG-DOPING; RELATIVE INTENSITY; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SIMPLE THERMAL CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET EMISSION;

MAGNESIUM;

EID: 84916912170 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2014.11.095 Document Type: Article

Times cited : (19)

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