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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2230-2232

Photoluminescence of GaN/AlN quantum dots at high excitation powers

(2) Aleksandrov, Ivan a Zhuravlev, Konstantin a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

GaN AlN; MBE; Photoluminescence; Quantum dots; Time resolved spectra

Indexed keywords

BAND GAP RENORMALIZATION; DECAY LAW; DELAY TIME; EXCITATION POWER; GAN/ALN; GAN/ALN QUANTUM DOTS; LOWER ENERGIES; MBE; NONSTATIONARY; PL BANDS; PULSED EXCITATION; QUANTUM DOT; RED SHIFT; TEMPERATURE DEPENDENCIES; TIME-RESOLVED SPECTRA; WURTZITE GAN/ALN QUANTUM DOTS;

CARRIER LIFETIME; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; PHOTOLUMINESCENCE; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77955827079 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983469 Document Type: Conference Paper

Times cited : (5)

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