Compensating defects in Si-doped AlN bulk crystals

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 323-326

  Irmscher, K ^a   Schulz, T ^a   Albrecht, M ^a   Hartmann, C ^a   Wollweber, J ^a   Fornari, R ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

AlN bulk crystals; Compensation; Si doping

Indexed keywords

CONDUCTION BANDS; CONDUCTIVE MATERIALS; DOPING (ADDITIVES); ELECTRON TRAPS; SILICON COMPOUNDS; SUBLIMATION;

BULK CRYSTALS; HIGH CONCENTRATIONS; IMPURITY BAND;

CRYSTAL STRUCTURE;

EID: 36049025896     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.178     Document Type: Article

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