Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Applied Physics Letters

Volumn 104, Issue 22, 2014, Pages

  Wang, Q ^a   Zhao, S ^a   Connie, A T ^a   Shih, I ^a   Mi, Z ^a   Gonzalez, T ^a   Andrews, M P ^a   Du, X Z ^b   Lin, J Y ^b   Jiang, H X ^b  

^a MCGILL UNIVERSITY   (Canada)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; SILICON;

CATALYST-FREE; ENERGY SEPARATIONS; FREE-EXCITON EMISSIONS; LONGITUDINAL OPTICAL; MICRO-RAMAN SCATTERING; PHONON REPLICA; PHOTOLUMINESCENCE INTENSITIES; ROOM TEMPERATURE;

NANOWIRES;

EID: 84902449327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4881558     Document Type: Article

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