Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

Science China Technological Sciences

Volumn 58, Issue 5, 2015, Pages 832-839

  Qin, Mei ^a   Shang, Yan ^a   Wang, Xiao ^a   Zhang, GuiLing ^a  

^a HARBIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

AlN nanowire; electronic property; Mg doping; N vacancy; transport property

Indexed keywords

ALUMINUM NITRIDE; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; III-V SEMICONDUCTORS; NANOWIRES; TRANSPORT PROPERTIES;

ALN NANOWIRE; DEEP DONOR; DEFECT BANDS; DEFECT CONCENTRATIONS; HOLE STATE; MG-DOPING; N VACANCY; VALENCE-BAND MAXIMUMS;

MAGNESIUM;

EID: 84930681984     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-015-5796-1     Document Type: Article

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