High p-type conduction in high-Al content Mg-doped AlGaN

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Kinoshita, Toru ^a,b   Obata, Toshiyuki ^a   Yanagi, Hiroyuki ^a   Inoue, Shin Ichiro ^b,c  

^a TOKUYAMA CORPORATION   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN FILMS; EFFECTIVE ACTIVATION ENERGY; ELECTRICAL RESISTIVITY; MG CONCENTRATIONS; MG-DOPING; NITROGEN VACANCIES; P-TYPE; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE MEASUREMENTS; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SELF-COMPENSATION; TEMPERATURE DEPENDENCE; V/III RATIO;

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING;

ALUMINUM;

EID: 84872282299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773594     Document Type: Article

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