Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping

ACS Nano

Volumn 5, Issue 5, 2011, Pages 3591-3598

  Tang, Yong Bing ^a   Bo, Xiang Hui ^a   Xu, Jun ^a   Cao, Yu Lin ^a   Chen, Zhen Hua ^a   Song, Hai Sheng ^a   Liu, Chao Ping ^a   Hung, Tak Fu ^a   Zhang, Wen Jun ^a   Cheng, Hui Ming ^b   Bello, Igor ^a   Lee, Shuit Tong ^a   Lee, Chun Sing ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF METAL RESEARCH   (China)

Author keywords

Aluminum nitride; Conductivity; Field effect transistors; Mg doping; Nanowire arrays; Tunable p type

Indexed keywords

ALN; ALN FILMS; ALN NANOWIRE; CYCLOPENTADIENYLS; DEEP-UV; ELECTRICAL TRANSPORT PROPERTIES; MG DOPING; MG-DOPED; N-TYPE CONDUCTIVITY; NANO-DEVICES; NANOWIRE ARRAYS; ORDERS OF MAGNITUDE; P-TYPE; P-TYPE ALN; P-TYPE CONDUCTIVITY; SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; TRANSPORT MEASUREMENTS; WELL-ALIGNED;

ALUMINUM COATINGS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; HOLE CONCENTRATION; HOLE MOBILITY; LIGHT EMITTING DIODES; MAGNESIUM; NANOWIRES; NITRIDES; OPTOELECTRONIC DEVICES; SECONDARY BATTERIES; SEMICONDUCTOR DOPING; TRANSISTORS; TRANSPORT PROPERTIES;

ALUMINUM NITRIDE;

ALUMINUM DERIVATIVE; ALUMINUM NITRIDE; MAGNESIUM; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ALUMINUM COMPOUNDS; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MAGNESIUM; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; TRANSISTORS, ELECTRONIC;

EID: 80051485750     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200963k     Document Type: Article

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