Advanced oxynitride gate dielectrics for CMOS applications

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 140-145

  Yugami, J ^a   Tsujikawa, S ^a   Tsuchiya, R ^b   Saito, S ^b   Shimamoto, Y ^b   Torii, K ^a   Mine, T ^b   Onai, T ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Degradation; Dielectric devices; High K dielectric materials; High K gate dielectrics; Impurities; Leakage current; Niobium compounds; Nitrogen; Silicon compounds; Titanium compounds

Indexed keywords

DEGRADATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; IMPURITIES; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; NIOBIUM COMPOUNDS; NITROGEN; OXYGEN; PROBLEM SOLVING; SILICON COMPOUNDS; SILICON NITRIDE; TITANIUM COMPOUNDS;

HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; LOW-LEAKAGE CURRENT; MOBILITY DEGRADATION; NITROGEN CONCENTRATIONS; OXYNITRIDE GATE DIELECTRIC; SIN GATE DIELECTRICS; SION GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 84930202615     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159201     Document Type: Conference Paper

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