An atomic model of the nitrous-oxide-nitrided SiO 2/Si interface

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2475-2478

  Kushida Abdelghafar, Keiko ^a   Watanabe, Kikuo ^a   Kikawa, Takeshi ^a   Kamigaki, Yoshiaki ^a   Ushio, Jiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MODELS; CORE-LEVEL SHIFT; INTERFACE TRAPS; INTERFACIAL STRUCTURES; NITRIDED; NITROGEN BONDS; NO ANNEALING; OXYGEN ATOM; PHYSICAL ANALYSIS;

INFORMATION DISSEMINATION; MAGNETIC MOMENTS; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 0036733849     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497720     Document Type: Article

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