An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 202-203

  Tsujikawa, Shimpei ^a   Mine, Toshiyuki ^a   Shimamoto, Yasuhiro ^a   Tonomura, Osamu ^a   Tsuchiya, Ryuta ^a   Ohnishi, Kazuhiro ^a   Hamamura, Hirotaka ^a   Torii, Kazuyoshi ^a   Onai, Takahiro ^a   Yugami, Jiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ETCHING; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SILICON NITRIDE;

GATE DIELECTRICS;

GATES (TRANSISTOR);

EID: 0036045250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)