Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuit

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 406-408

  Barlage, Douglas W ^a   O'Keeffe, James T ^a,b   Kavalieros, Jack T ^a   Nguyen, Michael M ^a   Chau, Robert S ^a  

^a INTEL CORPORATION   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; ELECTRIC POWER FACTOR CORRECTION; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

DISCRETE ELEMENT-BASED MODELS; HIGH-LEAKAGE DIELECTRICS; TRANSMISSION LINE EQUIVALENT CIRCUITS;

MOSFET DEVICES;

EID: 0034258708     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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