Impact of Oxygen-enriched SiN Interface on Al2O3 Gate Stack an Innovative Solution to Low-power CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 145-146

  Saito, S ^a   Shimamoto, Y ^a   Tsujikawa, S ^a   Hamamura, H ^a   Tonomura, O ^a   Hisamoto, D ^a   Mine, T ^a   Torii, K ^a   Yugami, J ^a   Hiratani, M ^a   Onai, T ^a   Kimura, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICON NITRIDE; CMOS INTEGRATED CIRCUITS; OXYGEN;

COULOMB SCATTERING;

CMOS INTEGRATED CIRCUITS; SILICON NITRIDE;

COULOMB SCATTERING; CRITICAL ISSUES; FIXED CHARGES; GATE STACKS; HIGH-Κ DIELECTRICS; INNOVATIVE SOLUTIONS; INTERFACIAL LAYER; LOW POWER CMOS; NITROGEN PROFILE; OXYGEN-ENRICHED;

EID: 0141538305     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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