Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 150-151

  Tsuchiya, Ryuta ^a   Ohnishi, Kazuhiro ^a   Horiuchi, Masatada ^a   Tsujikawa, Shimpei ^a   Shimamoto, Yasuhiro ^a   Inada, Naomi ^a   Yugami, Jiro ^a   Ootsuka, Fumio ^a   Onai, Takahiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; OXYGEN; SILICON NITRIDE; ULTRASHORT PULSES;

DRIVE CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0036051392     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)