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Advanced Functional Materials

Volumn 25, Issue 19, 2015, Pages 2876-2883

Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage

(5) Kwon, Jonghan a Sharma, Abhishek A b Bain, James A b Picard, Yoosuf N a Skowronski, Marek a

a CARNEGIE MELLON UNIVERSITY (United States)

b CARNEGIE MELLON UNIVERSITY (United States)

Author keywords

in situ TEM; oxygen vacancy; RRAM; TiO2; Wadsley defects

Indexed keywords

COALESCENCE; DEFECTS; DISSOCIATION; ELECTRIC EXCITATION; ELECTRIC FIELDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OXIDE MINERALS; RRAM; SWITCHING; TEMPERATURE; TITANIUM DIOXIDE; TITANIUM NITRIDE;

ELECTROCHEMICAL REACTIONS; ELEMENTARY PROCESS; IN-SITU TEM; PARTIAL DISLOCATIONS; RESISTIVE SWITCHES; RESISTIVE SWITCHING; RESISTIVE SWITCHING DEVICES; TIO2;

OXYGEN VACANCIES;

EID: 84929359599 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201500444 Document Type: Article

Times cited : (85)

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