Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 18, 2009, Pages 3072-3075

  Pastewka, Lars ^a,b   Salzer, Roland ^a   Graff, Andreas ^a   Altmann, Frank ^a   Moseler, Michael ^a,b  

^a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

Focused ion beam milling; Molecular dynamics; Silicon; Surface amorphization

Indexed keywords

AMORPHOUS LAYER; BEAM ENERGIES; CROSS SECTION; DAMAGED LAYERS; FOCUSED ION BEAM MILLING; GRAZING ANGLES; INTRINSIC STRESS; INTRINSIC SURFACES; LOW BEAM; LOW ENERGIES; LOW VOLTAGES; MICRO-ELECTRONIC DEVICES; MOLECULAR DYNAMICS SIMULATIONS; NANO SCALE; REGION OF INTEREST; SAMPLE PREPARATION; SPUTTER RATE; SURFACE AMORPHIZATION; SURFACE DAMAGES; TEM; TEM IMAGES;

AMORPHIZATION; BEAM PLASMA INTERACTIONS; ION BOMBARDMENT; IONS; MILLING (MACHINING); MOLECULAR DYNAMICS; POLISHING; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS;

EID: 69949142901     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.094     Document Type: Article

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