Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 877-883

  Noman, Mohammad ^a   Jiang, Wenkan ^a   Salvador, Paul A ^a   Skowronski, Marek ^a   Bain, James A ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL INVESTIGATION; FAST SWITCHING; IONIC MOTION; OPERATING WINDOWS; RESISTANCE SWITCHING; RETENTION CHARACTERISTICS; SCHOTTKY DEVICES; SRTIO;

ACTIVATION ENERGY; ELECTRIC FIELDS; OXYGEN VACANCIES;

SWITCHING;

EID: 79955401946     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6270-y     Document Type: Article

References (34)

1. D. Strukov, G. Snider, D. Stewart, S.Williams, Nature 431, 80-83 (2008).
2. A. Sawa, Mater. Today 11, 28-36 (2008).
3. J.J. Yang, J. Borghetti, D. Murphy, D.R. Stewart, R.S. Williams, Adv. Mater. 21, 3754-3758 (2009).
4. K. Jung, J. Choi, Y. Kim, H. Im, S. Seo, R. Jung, D.C. Kim, J.S. Kim, B.H. Park, J.P. Hong, J. Appl. Phys. 103, 034504 (2008).
5. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429-433 (2008).
6. C. Yoshida, K. Tsunoda, H. Noshiro, Y. Sugiyama, Appl. Phys. Lett. 91, 223510 (2007).
7. S. Muraoka, K. Osano, Y. Kanzawa, S. Mitani, S. Fujii, K. Katayama, Y. Katoh, Z. Wei, T. Mikawa, K. Arita, Y. Kawashima, R. Azuma, K. Kawai, K. Shimakawa, A. Odagawa, T. Takagi, Tech. Dig., Int. Electron Devices Meet. 779-782 (2007).
8. R.Waser, R. Dittmann, G. Staikov, K. Szot, Adv.Mater. 21, 2632- 2663 (2009).
9. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312- 320 (2006).
10. J. Blanc, D.L. Staebler, Phys. Rev. B 4, 3548-3557 (1971).
11. D.B. Strukov, J.L. Borghetti, R.S. Williams, Small 5, 1058-1063 (2009).
12. D.B. Strukov, R.S. Williams, Appl. Phys. A 94, 515-519 (2009).
13. S.H. Jeon, B.H. Park, J.C. Lee, B.R. Lee, S.W. Han, Appl. Phys. Lett. 89, 042904 (2006).
14. H. Shima, N. Zhong, H. Akinaga, Appl. Phys. Lett. 94, 082905 (2009).
15. W. Jiang, D. Evans, J.A. Bain, M. Skowronski, P.A. Salvador, Appl. Phys. Lett. 96, 092102 (2010).
16. R. Moos, W. Menesklou, K.H. Häerdtl, Appl. Phys. A 61, 389- 395 (1995).
17. J. Maier, Physical Chemistry of Ionic Materials (Wiley, Chichester, 2004).
18. S.A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser, Appl. Phys. Lett. 77, 1662-1664 (2000).
19. G.M. Choi, H.L. Tuller, D. Goldschmidt, Phys. Rev. B 34, 6972- 6979 (1986).
20. R. Waser, T. Baiatu, K.-H. Härdtl, J. Am. Ceram. Soc. 73, 1654- 1662 (1990).
21. C.R. Crowell, V.V.L. Rideout, Solid-State Electron. 12, 89-105 (1969).
22. H.-M. Christen, J. Mannhart, E.J. Williams, Ch. Gerber, Phys. Rev. B 49, 12095-12104 (1994).
23. H. Yamada, G.R. Miller, J. Solid State Chem. 6, 169-177 (1973).
24. K.G. Rajan, P. Parameswaran, J. Janaki, T.S. Radhakrishnan, J. Phys. D, Appl. Phys. 23, 694-697 (1990).
25. H.B. Huntington, A.R. Grone, J. Phys. Chem. Solids 20, 76-87 (1961).
26. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, IEEE Trans. Electron Devices 56, 193-200 (2009).
27. D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-I. Chung, J.T. Moon, B.I. Ryu, Appl. Phys. Lett. 88, 202102 (2006).
28. L.A. Errico, G. Fabricius, M. Rentería, P. de la Presa, M. Forker, Phys. Rev. Lett. 89, 055503 (2002).
29. J.W. McPherson, J. Kim, A. Shanware, H. Mogul, J. Rodriguez, IEEE Trans. Electron Devices 50(8), 1771-1778 (2003).
30. A.B. Lidiard, Handb. Phys. 20, 246349 (1957).
31. R.W. Munn, J. Phys. C, Solid State Phys. 8, 2721-2728 (1975).
32. C.T. Black, J.J.Welser, IEEE Trans. Electron Devices 46(4), 776- 780 (1999).
33. J.C. Slater, Phys. Rev. 78, 748-761 (1950).
34. R.A. Parker, Phys. Rev. 124, 1713-1719 (1961).