Realization of Cu-doped p-type ZnO thin films by molecular beam epitaxy

ACS Applied Materials and Interfaces

Volumn 7, Issue 16, 2015, Pages 8894-8899

  Suja, Mohammad ^a   Bashar, Sunayna B ^a   Morshed, Muhammad M ^a   Liu, Jianlin ^a  

^a University of California Riverside   (United States)

Author keywords

Cu dopant; molecular beam epitaxy (MBE); p type; thin film; ZnO

Indexed keywords

CHARGE COUPLED DEVICES; DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOS CAPACITORS; MOS DEVICES; OPTICAL FILMS; OXIDE FILMS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER COMPENSATION; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OPTICAL CHARACTERISTICS; P-TYPE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; X-RAY PHOTOELECTRONS; ZNO;

COPPER;

EID: 84928786985     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01564     Document Type: Article

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