Electrical properties and Raman spectra of undoped and Al-doped ZnO thin films by metalorganic vapor phase epitaxy

Materials Science and Engineering: B

Volumn 86, Issue 2, 2001, Pages 109-112

  Zhaochun, Zhang ^a   Baibiao, Huang ^b   Yongqin, Yu ^b   Deliang, Cui ^b  

^a SHANGHAI UNIVERSITY   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

Carrier concentration; Hall mobility; Raman spectra; Resistivity; ZnO

Indexed keywords

ALUMINUM; ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; ZINC OXIDE;

HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 0035949879     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00522-0     Document Type: Article

References (6)