Understanding modern transistors and diodes

Understanding Modern Transistors and Diodes

Volumn 9780521514606, Issue , 2010, Pages 1-335

  Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; DIODES; EDUCATION; LIGHT EMITTING DIODES; NANOTRANSISTORS; STUDENTS;

BOLTZMANN TRANSPORT EQUATION; DEVICE CAPACITANCE; ENERGY GENERATIONS; MODERN APPLICATIONS; POTENTIAL IMPACTS; THEORETICAL FRAMEWORK; THEORETICAL TREATMENTS; TRANSISTOR TYPES;

MOSFET DEVICES;

EID: 84924016599     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1017/CBO9780511840685     Document Type: Book

References (110)

1. S.M. Sze, Semiconductor Devices, Physics and Technology, 1st Edn., Fig. 1.3b, John Wiley & Sons Inc., 1985.
2. C.M. Wolfe, N. Holonyak Jr. and G.E. Stillman, Physical Properties of Semiconductors, Prentice-Hall, 1989.
3. D.J. Griffiths, Introduction to Quantum Mechanics, pp. 52-55, 198-201, Prentice-Hall, 1995.
4. C. Kittel, Introduction to Solid State Physics, 3rd Edn., Chap. 2, John Wiley & Sons Inc., 1968.
5. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, Fig. 2.7a, Prentice-Hall, 1989.
6. S. Datta, Quantum Transport: Atom to Transistor, Sec. 5.3, Cambridge University Press, 2005.
7. J.H. Davies, The Physics of Low-dimensional Semiconductors, Cambridge University Press, 1998.
8. R.F. Pierret, Advanced Semiconductor Fundamentals, Chap. 3, Addison-Wesley, 1987.
9. L. Reggiani, Hot Electron Transport in Semiconductors, Chap. 1: General Theory, Springer- Verlag, 1985.
10. S. Datta, Quantum Phenomena, Sec. 1.1 and Chap. 6, Addison-Wesley, 1989.
11. C.M. Wolfe, N. Holonyak Jr. and G.E. Stillman, Physical Properties of Semiconductors, pp. 177-182, Prentice-Hall, 1989.
12. J.H. Davies, The Physics of Low-dimensional Semiconductors, p. 75, Cambridge University Press, 1998.
13. J.D. Plummer, M.D. Deal and PB. Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling, Chaps. 7 and 8, Prentice-Hall, 2000.
14. R.N. Hall, Electron-hole Recombination in Germanium, Phys. Rev., vol. 87, 387, 1952.
15. W. Shockley and W.T. Read Jr., Statistics of the Recombination of Holes and Electrons, Phys. Rev., vol. 87, 835-842, 1952.
16. ATLAS Users Manual, Silvaco Data Systems, Santa Clara, June 11, 2008.
17. E.F. Schubert, Light-emitting Diodes, 2nd Edn., p. 53, Cambridge University Press, 2006.
18. W. Liu, Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs, p. 58, John Wiley & Sons Inc., 1999.
19. R.F. Pierret, Advanced Semiconductor Fundamentals, Chap. 4, Addison-Wesley, 1987.
20. C.M. Wolfe, N. Holonyak Jr. and G.E. Stillman, Physical Properties of Semiconductors, Prentice-Hall, 1989.
21. J.H. Davies, The Physics of Low-dimensional Semiconductors, Secs. 8.1-8.4, Cambridge University Press, 1998.
22. M.S. Lundstrom, Fundamentals of Carrier Transport, Chap. 2, Cambridge University Press, 2000.
23. H.E. Talley and D.G. Daugherty, Physical Principles of Semiconductor Devices, Chap. 5, Iowa State University Press, 1976.
24. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, Prentice-Hall, 1989.
25. R. Kim and M.S. Lundstrom, Notes on Fermi-Dirac Integrals, 3rd Edn., posted Sept. 23, 2008. Online http://nanohub.org/resources/5475/
26. S. Datta, Quantum Phenomena, Sec. 5.3.2, Addison-Wesley, 1989.
27. ATLAS Users Manual, Sec. 3.4.3, Silvaco Data Systems, Santa Clara, June 11, 2008.
28. S.M. Sze, Semiconductor Devices, Physics and Technology, 1st Edn., John Wiley & Sons, Inc., 1985.
29. N.D. Arora, J.R. Hauser and D.J. Roulston, Electron and Hole Mobilities in Si as a Function of Concentration and Temperature, IEEE Trans. Electron. Dev., vol. 29, 292-295, 1982.
30. W. Liu, Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs, p. 60, John Wiley & Sons Inc., 1999.
31. M.S. Lundstrom, Fundamentals of Carrier Transport, Chap. 5, Cambridge University Press, 2000.
32. D.J. Griffiths, Introduction to Quantum Mechanics, Chap. 8, Prentice-Hall, 1995
33. cGraw-Hill Inc., 1994. Online http://hdl.handle.net/1721.1/34219
34. W. Shockley, Electrons and Holes in Semiconductors, D.Van Nostrand Co., Inc., 1950.
35. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, pp. 138-140, Prentice- Hall, 1989.
36. ASTM G173-03e1, Standard Tables for Reference Solar Spectral Irradiance at Air Mass 1.5: Direct Normal and Hemispherical for a 37 Degree Tilted Surface. Available from ASTM International, West Conshohocken, PA, http://www.astm.org/Standards/G173.htm
37. T. Markvart and L. Castener, Solar Cells: Materials, Manufacture and Operation, Fig. 7, Elsevier, 2005.
38. M.A. Green and M.J. Keevers, Optical Properties of Intrinsic Silicon at 300 K, Progress in Photovoltaics: Research and Applications, vol. 3, 189-192, 1995.
39. W. Shockley, Electrons and Holes in Semiconductors, p. 321, D.Van Nostrand Co., Inc., 1950.
40. Z. Jhao, A. Wang, P. Campbell and M.A. Green, 22.7% Efficient PERL Silicon Solar Cell Module with Textured Front Surface, Proc. IEEE 26th Photovoltaic Specialists Conf., pp. 1133-1136, 1997.
41. J. Zhao, A. Wang and M.A. Green, 24.5% Efficiency Silicon PERT Cells on MCZ Substrates and 24.7% Efficiency PERL Cells on FZ Substrates, Progress in Photovoltaics: Research and Applications, vol. 7, 471-474, 1999.
42. N.G. Tarr and D.L. Pulfrey, An Investigation of Dark Current and Photocurrent Superposition in Solar Cells, Solid-State Electronics, vol. 22, 265-270, 1979.
43. M.A. Green, Solar Cells: Operating Principles, Technology and System Applications, p. 89, Prentice-Hall, 1982.
44. 2Solar Cell with 81.2% Fill Factor, Progress in Photovoltaics: Research and Applications, vol. 16, 235-239, 2008.
45. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif and N. H. Karam, 40% Efficient Metamorphic GaInP/GalnAs/Ge Multijunction Solar Cells, Appl. Phys. Lett., vol. 90, 183-516, 2007.
46. R. Noufi and K. Zweibel, High Efficiency CdTe and CIGS Thin-film Solar Cells: Highlights and Challenges, IEEE 4th World Conference on Photovoltaic Energy Conversion, pp. 317320, 2006.
47. International Energy Agency, World Energy Outlook, 2006, ISBN: 92 64 10989 7. (The IEA is the recognized authority on global energy growth; it publishes an outlook annually.)
48. K.J. Weber, A.W. Blakers, PN.K. Deenapanray, V. Everett and E. Franklin, Sliver © Solar Cells, Proc. IEEE 31st Photovoltaic Specialists Conf., pp. 991-994, 2005.
49. F. Schwierz, Microwave Transistors - the Last 20 Years, Proc. IEEE 3rd Int. Caracas Conf. on Devices, Circuits and Systems, pp. D28/1-7, 2000.
50. E.F. Schubert, Light-Emitting Diodes, 2nd Edn., Cambridge University Press, 2006.
51. O.B. Shchekin, J.E. Epler, T.A. Trottier, T. Margalith, D.A. Steigerwald, M.O. Holcomb, P.S. Martin and M.R. Krames, High Performance Thin-film Flip-chip InGaN-GaN Light-emitting Diodes, Appl. Phys. Lett., vol. 89, 071-109, 2006
52. O.B. Shchekin and D. Sun, Evolutionary New Chip Design Targets Lighting Systems, Compound Semiconductors, vol. 13(2), 2007.
53. J.Y. Tsao, Solid-state Lighting: Lamps, Chips and Materials for Tomorrow, IEEE Circuits and Devices Magazine, pp. 28-37, May/June 2004.
54. Basic Research Needs of Solid-State-Lighting, Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22-24, 2006. Online http://www.er.doe.gov/bes/reports/abstracts.html#SSL.
55. D.L. Pulfrey, Heterojunction Bipolar Transistor, Wiley Encyclopedia of Electrical and Electronics Engineering, J.G. Webster, Ed., John Wiley & Sons, Inc., vol. 8, 690-706, 1999.
56. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, p. 348, Prentice-Hall, 1989.
57. J.E. Lilienfeld, Device for Controlling Electric Current, US patent, 1, 900, 018, March 7, 1933.
58. C.T. Sah, Fundamentals of Solid-State Electronics, p. 521, World Scientific Publishing Co., Singapore, 1991.
59. G. Gildenblat, X. Li, W. Wu, H. Wang, A. Jha, R. van Langevelde, G.D.J. Smit, A.J. Scholten and D.B.M. Klaassen, PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation, IEEE Trans. Electron Dev., vol. 53, 1979-1993, 2006.
60. W. Liu, MOSFET Models for SPICE Simulation, Including BSIM3V3 and BSIM4, John Wiley & Sons, Inc., 2001.
61. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd Edn., Chap. 4, Oxford University Press, 1999.
62. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, Prentice-Hall, 1989.
63. cGraw-Hill, 1987.
64. S.M. Sze, Semiconductor Devices, Physics and Technology, 2nd Edn., Fig. 7.15, John Wiley & Sons, Inc., 2002.
65. F. Berz, The Bethe Condition for Thermionic Emission near an Absorbing Boundary, Solid State Electronics, vol. 28, 1007-1013, 1985.
66. D. Kabiraj, R. Grotzschel and S. Ghosh, Modification of Charge Compenstation in Semiinsulating Semiconductors by High Energy Light Ion Irradiation, J. Appl. Phys., vol. 103, 053-703, 2008.
67. P. Roblin and H. Rohdin, High-speed Heterostructure Devices, Fig. 4.7, Cambridge University Press, 2002.
68. D.J. Griffiths, Introduction to Quantum Mechanics, Sec. 2.6, Prentice-Hall, 1995.
69. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd Edn., Sec. 9.2.1, Oxford University Press, 1999.
70. D.L. Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, Prentice-Hall, 1989.
71. D.L. John, Limits to the Signal Delay in Ballistic Nanoscale Transistors, IEEE Trans. Nano- technolgy, vol. 7, 48-55, 2008.
72. International Technology Roadmap for Semiconductors (ITRS). Online http://public.itrs.net/.
73. G.E. Moore, Cramming More Components onto Integrated Circuits, Electronics Magazine, vol. 38, 114-117, 1965.
74. C. Kittel, Introduction to Solid State Physics, 3rd Edn., Chap. 4, John Wiley & Sons Inc., 1968.
75. S.E. Thompson, G. Sun, Y.-S. Choi and T. Nishida, Uniaxial-process-induced Strained-Si: Extending the CMOS Roadmap, IEEE Trans. Electron Dev., vol. 53, 1010-1018, 2006.
76. S.E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr and Y. El-Mansy, A Logic Technology Featuring Strained-silicon, IEEE Electron Dev. Lett., vol. 25, 191-193, 2004.
77. S.-E. Ungersbock, Advanced Modeling of Strained CMOS Technology, Ph.D. dissertation, Technical University of Vienna, 2007. Online http://www.iue.tuwien.ac.at/phd/ungersboeck/.
78. J.D. Plummer, M.D. Deal and P.B. Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling, Prentice-Hall, 2000.
79. J. Kretz, L. Dreeskornfeld, R. Schroter, E. Landgraf, F. Hofmann and W. Rosner, Realization and Characterization of Nano-scale FinFET Devices, Microelectronic Engineering, vol. 73-74, 803-808, 2004.
80. D.L Pulfrey and N.G. Tarr, Introduction to Microelectronic Devices, Fig. 11E.7, Prentice-Hall, 1989.
81. max= 340 GHz, Appl. Phys. Lett., vol. 87, 252-109, 2005.
82. W. Hafez and M. Feng, Experimental Demonstration of Pseudomorphic Heterojunction Bipolar Transistors with Cutoff Frequencies above 600 GHz, Appl. Phys. Lett., vol. 86, 152-101, 2005.
83. W. Liu, Fundamentals of III-V Devices: HBTs, MESFETs, andHFETs/HEMTs, pp. 226-231, John Wiley & Sons Inc., 1999.
84. maxfor Heterojunction Bipolar Transistors, IEEE Trans. Electron Dev., vol. 46, 301-309, 1999.
85. Sungjae Lee, Lawrence Wagner, Basanth Jagannathan, Sebastian Csutak, John Pekarik, Noah Zamdmer, Matthew Breitwisch, Ravikumar Ramachandran and Greg Freeman, Record RF Performance of Sub-46 nm Lgate NFETs in Microprocessor SOI CMOS Technologies, IEEE IEDM Tech. Digest, 241-244, 2005.
86. Tof 562 GHz, IEEE Electron Dev. Lett., vol. 23, 573-575, 2002.
87. maxfor CNFETs, Nanotechnology, vol. 17, 300-304, 2006.
88. G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, 2nd Edn., Chap. 1, Prentice-Hall, 1984.
89. S.J. Mason, Power Gain in Feedback Amplifier, IRE Trans. Circuit Theory, vol. 1, 20-25, 1954.
90. S.C.M. Ho and D.L. Pulfrey, The Effect of Base Grading on the Gain and High-frequency Performance of AlGaAs/GaAs Heterojunction Bipolar Transistors, IEEE Trans. Electron Dev., vol. 36, 2173-2182, 1989.
91. C. Trinh etal., A 5.6MB/s 64Gb 4b/cellNAND Flash Memory in 43 nm CMOS, ISSCCDigest Tech. Papers, 246-248, 2009.
92. 2Buried Wordline DRAM Cell for 40 nm and Beyond, IEEE IEDM Tech. Digest, paper 33.4, 2008.
93. D. DiSanto, Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor Fabrication and Characterization, Table 1-1, Ph.D. Thesis, Simon Fraser University, 2005.
94. E.O. Johnson, Physical Limitations on Frequency and Power Parameters of Transistors, RCA Review, vol. 26, 163-177, 1965
95. Y. Apanovich, P. Blakey, R. Cottle, E. Lyumkis, B. Polsky, A. Shur and A. Tcherniaev, Numerical Simulation of submicrometer Devices Including Coupled Nonlocal Transport and Nonisothermal Effects, IEEE Trans. Electron Dev., vol. 42, 890-898, 1995.
96. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, Two-dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN/GaN Heterostructures, J. Appl. Phys., vol. 85, 3222-3233, 1999.
97. A. Ludikhuize, A Review of RESURF Technology, Proc. 12th IEEE Int. Symp. Power Semiconductor Devices andICs, pp. 11-18, 2000.
98. A. van der Ziel, Noise in Solid State Devices and Circuits, John Wiley & Sons, Inc., 1986.
99. M. Chertouk, A. Chovet and A. Clei, 1 /f Trapping Noise Theory with Uniform Distribution of Energy-activated Traps and Experiments in GaAs/InP MESFETs Biased from Ohmic to Saturation Region, AIP Conf. Proc., vol. 285, 427-432, 1993.
100. G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, 2nd Edn., Appendix L, Prentice-Hall, 1984.
101. P. Roblin and H. Rohdin, High-speed Heterostructure Devices, Cambridge University Press, 2002.
102. Kinneret Keren, Rotem S. Berman, Evgeny Buchstab, Uri Sivan and Erez Braun, DNA- templated Carbon Nanotube Field-effect Transistor, Science, vol. 302, 1380-1382, 2003.
103. K.K. Likharev, Single-electron Devices and Their Applications, Proc. IEEE, vol. 87, 606­632, 1999.
104. J. Chen, M. A. Reed, A. M. Rawlett and J. M. Tour, Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device, Science, vol. 286, 1550-1552, 1999.
105. S. Datta and B. Das, Electronic Analog of the Electro-optic Modulator, Appl. Phys. Lett., vol. 56, 665-667, 1990.
106. D.L. John, L.C. Castro, P.J.S. Pereira and D.L. Pulfrey, A Schrodinger-Poisson Solver for Modeling Carbon Nanotube FETs, Tech. Proc. NSTI Nanotechnology Conf. and Trade Show, vol. 3, 65-68, 2004.
107. TforCNFETs, IEEE Trans. Nanotechnology, vol. 4, 699-704, 2005.
108. L.C. Castro, D.L. John and D.L. Pulfrey, An Evaluation of CNFET DC Performance, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, Proc. SPIE, vol. 5276, 1-10, 2004.
109. W. Liu, Fundamentals of III-VDevices: HBTs, MESFETs, andHFETs/HEMTs, p. 440, John Wiley & Sons Inc., 1999.
110. D.A. Frickey S, Z, Y, H ABCD, and T Parameters which are Valid for Complex Source and Load Impedances, IEEE Trans. Microwave Theory and Techniques, vol. 42, 205-211, 1994.