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Volumn 16, Issue 3, 2008, Pages 235-239

19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor

Author keywords

CIGS; Diode quality; Fill factor; Recombination; Record efficiency; Saturation current; Surface; Thin film solar cells

Indexed keywords

EFFICIENCY; THIN FILM DEVICES;

EID: 42249114488     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.822     Document Type: Article
Times cited : (2073)

References (16)
  • 3
    • 42249115835 scopus 로고    scopus 로고
    • US Patent No. 5,441,897 (15 August 1995) and US Patent No. 5,436,204 (25 July 1995).
    • US Patent No. 5,441,897 (15 August 1995) and US Patent No. 5,436,204 (25 July 1995).
  • 9
    • 42249089037 scopus 로고    scopus 로고
    • See, for example
    • See, for example http://www.nrel.gov/pv/measurements/device_performance. html
  • 11
    • 0024755084 scopus 로고
    • Diode quality factor determination for thin-film solar cells
    • Sites JR, Mauk PH. Diode quality factor determination for thin-film solar cells. Solar Cells 1989; 27: 411-417.
    • (1989) Solar Cells , vol.27 , pp. 411-417
    • Sites, J.R.1    Mauk, P.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.