A 5.6MB/s 64Gb 4b/Cell NAND flash memory in 43nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2009, Pages 246-248

  Trinh, C ^a   Shibata, N ^b   Nakano, T ^b   Ogawa, M ^b   Sato, J ^b   Takeyama, Y ^b   Isobe, K ^b   Le, B ^a   Moogat, F ^a   Mokhlesi, N ^a   Kozakai, K ^a   Hong, P ^a   Kamei, T ^a   Iwasa, K ^b   Nakai, J ^b   Shimizu, T ^b   Honma, M ^b   Sakai, S ^b   Kawaai, T ^b   Hoshi, S ^b   Yuh, J ^a   Hsu, C ^a   Tseng, T ^a   Li, J ^a   Hu, J ^a   Liu, M ^a   Khalid, S ^a   Chen, J ^a   Watanabe, M ^a   Lin, H ^a   Yang, J ^a   McKay, K ^a   Nguyen, K ^a,a   Pham, T ^a   Matsuda, Y ^b   Nakamura, K ^b   Kanebako, K ^b   Yoshikawa, S ^b   Igarashi, W ^b   Inoue, A ^b   Takahashi, T ^b   Komatsu, Y ^b   Suzuki, C ^b   Kanazawa, K ^b   Higashitani, M ^a   Lee, S ^a   Murai, T ^a   Lan, J ^a   Huynh, S ^a   Murin, M ^a   Shlick, M ^a   Lasser, M ^a   Cernea, R ^a   Mofidi, M ^a   Schuegraf, K ^a   Quader, K ^a   more..

^a SanDisk Corporation   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349271258     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2009.4977400     Document Type: Conference Paper

References (5)

1. N. Shibata, H. Maejima, K. Isobe, et al., "A 70nm 16Gb 16-level-cell NAND Flash Memory," Symp. VLSI Circuits Digest, pp. 190-191, 2007.
2. Y. Li, S. Lee, Y. Fong, et al., "A 16Gb 3b/Cell NAND Flash Memory in 56nm with 8MB/s Write Rate," ISSCC Dig. Tech Papers, pp. 506-507, Feb. 2008.
3. T. Cho, Y-T. Lee, E. Kim, et al., "A 3.3V 1Gb Multi-Level NAND Flash with Non-Uniform Threshold Voltage Distribution," ISSCC Dig. Tech Papers, pp. 28-29, Feb. 2001.
4. R. Cernea, L. Pham, F. Moogat, et al., "A 34MB/s-Program-Thruput 16Gb MLC NAND with All-Bitline Architecture in 56nm," ISSCC Dig. Tech Papers, pp. 420-421, Feb. 2008.
5. 2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput," ISSCC Dig. Tech Papers, pp. 144-145, Feb. 2006.