메뉴 건너뛰기




Volumn , Issue , 2000, Pages 11-18

A review of RESURF technology

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; MOS DEVICES; NUMERICAL METHODS; RELIABILITY; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0034449647     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (323)

References (88)
  • 9
    • 0018985715 scopus 로고
    • Computer Analysis
    • (1980) , vol.27 , pp. 399-400
    • Ochi, S.1
  • 20
  • 22
    • 0005037679 scopus 로고
    • Modeling and optimization of lateral HV IC devices to minimize 3D effects
    • (Abstract 155-156)
    • (1987) El-Chem. Soc. Proc. , vol.87 , Issue.13 , pp. 290-294
    • Yilmaz, H.1
  • 39
    • 33646920638 scopus 로고
    • 1200V BiCMOS technology and its applications
    • (1992) ISPSD , pp. 322-327
    • Rumennik, V.1
  • 45
  • 47
    • 0031634556 scopus 로고    scopus 로고
    • New Resurf concept for 20V Ldmos without BV degradation
    • (1998) ISPSD , pp. 65-68
    • Kinoshita, K.1
  • 48
    • 4243995287 scopus 로고
    • Effects of Sipos passivation on dc and switching perf. of HV MOST's
    • (1986) IEDM , pp. 646-649
    • Mukherjee, S.1
  • 49
    • 0029204127 scopus 로고
    • 1000V n-LDMOS and p-LIGBT with JI Resurf and multiple floating field plate
    • (1995) ISPSD , pp. 455-459
    • Terashima, T.1
  • 61
    • 0027307646 scopus 로고
    • Structure of 600V IC and new voltage sensing device
    • (1993) ISPSD , pp. 224-229
    • Terashima, T.1
  • 64
    • 4243302343 scopus 로고
    • 530V gated-diode switch for telecom
    • (1981) IEDM , pp. 250-253
    • Hartman, A.1
  • 70
    • 0005084082 scopus 로고    scopus 로고
    • Economic 100V Resurf SOI BCD technol. for cons. and autom. applic.
    • (2000) ISPSD
    • Van Der Pol, J.1
  • 72
    • 0002659330 scopus 로고
    • Dep. of BV on drift length and BOX thickness in SOI Resurf Ldmosts
    • (1993) ISPSD , pp. 124-128
    • Merchant, S.1
  • 74
    • 0005037682 scopus 로고
    • Comparison of J.I. and SOI HV devices in source-follower mode
    • (1992) ISPSD , pp. 242-243
    • Arnold, E.1
  • 75
    • 0030650598 scopus 로고    scopus 로고
    • High-performance 600V smart power technology on thin SOI
    • (1997) ISPSD , pp. 49-52
    • Letavic, T.1
  • 76
    • 0002773862 scopus 로고    scopus 로고
    • 600V power conversion system-on-chip based on thin SOI
    • (1999) ISPSP , pp. 325-328
    • Letavic, T.1
  • 77
    • 0005059037 scopus 로고
    • D.I. HV-IC technology (600V) for off-line applications
    • (1995) ISPSD , pp. 325-329
    • Stoisiek, M.1
  • 78
    • 0032598893 scopus 로고    scopus 로고
    • Improved LIGBT for 500V 3A one-chip inverter IC's
    • (1999) ISPSD , pp. 321-324
    • Nakagawa, A.1
  • 79
    • 0005082685 scopus 로고    scopus 로고
    • Plasma display driver IC (230V) using SOI
    • (1998) ISPSD , pp. 137
    • Sumida, H.1
  • 80
    • 0005004668 scopus 로고    scopus 로고
    • HV (240V) SOI CMOS IC for driving plasma displays
    • (1998) ISPSD , pp. 141
    • Kobayashi, K.1
  • 81
    • 4243303309 scopus 로고    scopus 로고
    • 300V smart-power IC using Gate-controlled SCR on SOI
    • (1996) IEDM , pp. 473
    • Gonzalez, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.