Substrate dielectric effects on graphene field effect transistors

Journal of Applied Physics

Volumn 115, Issue 19, 2014, Pages

  Hu, Zhaoying ^a   Prasad Sinha, Dhiraj ^a   Lee, Ji Ung ^a   Liehr, Michael ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GRAPHENE; HAFNIUM OXIDES; RAMAN SCATTERING; SCATTERING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON NITRIDE;

DIFFERENT SUBSTRATES; GRAPHENE FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON NITRIDE FILMS; HIGH CARRIER MOBILITY; MOBILITY DEGRADATION; OPTICAL AND ELECTRICAL PROPERTIES; SEMICONDUCTOR INDUSTRY; TETRAETHYL ORTHOSILICATES;

SUBSTRATES;

EID: 84901449360     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4879236     Document Type: Article

References (44)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005). 10.1038/nature04235
3. K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. Stormer, Solid State Commun. 146, 351 (2008). 10.1016/j.ssc.2008.02.024
4. F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, Nat. Nanotechnol. 4, 839 (2009). 10.1038/nnano.2009.292
5. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nat. Photonics 4, 611 (2010). 10.1038/nphoton.2010.186
6. A. A. Balandin, Nature Mater. 10, 569 (2011). 10.1038/nmat3064
7. V. V. Cheianov, V. Fal'ko, and B. L. Altshuler, Science 315, 1252 (2007). 10.1126/science.1138020
8. S. Sutar, E. S. Comfort, J. Liu, T. Taniguchi, K. Watanabe, and J. U. Lee, Nano Lett. 12, 4460 (2012). 10.1021/nl3011897
9. A. Mayorov, D. Elias, and I. Mukhin, Nano Lett. 12, 4629 (2012). 10.1021/nl301922d
10. J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C. W. Magnuson, R. S. Ruoff, L. Colombo, R. M. Wallace, and E. Vogel, ACS Nano 6, 3224 (2012). 10.1021/nn300107f
11. E. Hwang and S. Das Sarma, Phys. Rev. B 77, 115449 (2008). 10.1103/PhysRevB.77.115449
12. J.-H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, and M. Ishigami, Nat. Phys. 4, 377 (2008). 10.1038/nphys935
13. J. Yan and M. Fuhrer, Phys. Rev. Lett. 107, 206601 (2011). 10.1103/PhysRevLett.107.206601
14. V. Perebeinos and P. Avouris, Phys. Rev. B 81, 195442 (2010). 10.1103/PhysRevB.81.195442
15. K. Zou, X. Hong, D. Keefer, and J. Zhu, Phys. Rev. Lett. 105, 126601 (2010). 10.1103/PhysRevLett.105.126601
16. J.-H. Chen, W. Cullen, C. Jang, M. Fuhrer, and E. Williams, Phys. Rev. Lett. 102, 236805 (2009). 10.1103/PhysRevLett.102.236805
17. M. Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams, Nano Lett. 7, 1643 (2007). 10.1021/nl070613a
18. Z. H. Ni, L. A. Ponomarenko, R. R. Nair, R. Yang, S. Anissimova, I. V. Grigorieva, F. Schedin, P. Blake, Z. X. Shen, E. H. Hill, K. S. Novoselov, and A. K. Geim, Nano Lett. 10, 3868 (2010). 10.1021/nl101399r
19. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010). 10.1038/nnano.2010.172
20. W. Gannett, W. Regan, K. Watanabe, T. Taniguchi, M. F. Crommie, and A. Zettl, Appl. Phys. Lett. 98, 242105 (2011). 10.1063/1.3599708
21. M. J. Hollander, M. Labella, Z. R. Hughes, M. Zhu, K. A. Trumbull, R. Cavalero, D. W. Snyder, X. Wang, E. Hwang, S. Datta, and J. A. Robinson, Nano Lett. 11, 3601 (2011). 10.1021/nl201358y
22. A. Konar, T. Fang, and D. Jena, Phys. Rev. B 82, 115452 (2010). 10.1103/PhysRevB.82.115452
23. X. Li, C. W. Magnuson, A. Venugopal, J. An, J. W. Suk, B. Han, M. Borysiak, W. Cai, A. Velamakanni, Y. Zhu, L. Fu, E. M. Vogel, E. Voelkl, L. Colombo, and R. S. Ruoff, Nano Lett. 10, 4328 (2010). 10.1021/nl101629g
24. A. W. Tsen, L. Brown, M. P. Levendorf, F. Ghahari, P. Y. Huang, R. W. Havener, C. S. Ruiz-Vargas, D. A. Muller, P. Kim, and J. Park, Science 336, 1143 (2012). 10.1126/science.1218948
25. S. Bae, H. Kim, Y. Lee, X. Xu, J. S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song et al., Nat. Nanotechnol. 5, 574 (2010). 10.1038/nnano.2010.132
26. N. Petrone, C. R. Dean, I. Meric, A. van der Zande, P. Y. Huang, L. Wang, D. A. Muller, K. Shepard, and J. Hone, Nano Lett. 12, 2751 (2012). 10.1021/nl204481s
27. G.-X. Ni, Y. Zheng, S. Bae, H. R. Kim, A. Pachoud, Y. S. Kim, C.-L. Tan, D. Im, J.-H. Ahn, B. H. Hong, and B. Ozyilmaz, ACS Nano 6, 1158 (2012). 10.1021/nn203775x
28. W. Zhu, T. Low, V. Perebeinos, A. A. Bol, Y. Zhu, H. Yan, J. Tersoff, and P. Avouris, Nano Lett. 12, 3431 (2012). 10.1021/nl300563h
29. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009). 10.1063/1.3077021
30. H.-Y. Chiu, V. Perebeinos, Y.-M. Lin, and P. Avouris, Nano Lett. 10, 4634 (2010). 10.1021/nl102756r
31. S. Das Sarma and Q. Li, Solid State Commun. 152, 1795 (2012). 10.1016/j.ssc.2012.07.011
32. S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, Proc. Natl. Acad. Sci. U.S.A. 104, 18392 (2007). 10.1073/pnas.0704772104
33. Q. H. Wang, Z. Jin, K. K. Kim, A. J. Hilmer, G. L. C. Paulus, C. Shih, M. Ham, J. D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, J. Kong, P. Jarillo-Herrero, and M. S. Strano, Nat. Chem. 4, 724 (2012). 10.1038/nchem.1421
34. J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004). 10.1051/epjap:2004206
35. Y.-W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 99, 246803 (2007). 10.1103/PhysRevLett.99.246803
36. D. S. Novikov, Appl. Phys. Lett. 91, 102102 (2007). 10.1063/1.2779107
37. J. Robinson, H. Schomerus, L. Oroszlány, and V. Fal'ko, Phys. Rev. Lett. 101, 196803 (2008). 10.1103/PhysRevLett.101.196803
38. S. Das Sarma, S. Adam, E. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011). 10.1103/RevModPhys.83.407
39. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006). 10.1103/PhysRevLett.97.187401
40. A. C. Ferrari, Solid State Commun. 143, 47 (2007). 10.1016/j.ssc.2007.03. 052
41. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy, A. K. Geim, A. C. Ferrari, and A. K. Sood, Nat. Nanotechnol. 3, 210 (2008). 10.1038/nnano.2008.67
42. T. Mohiuddin, A. Lombardo, R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. Basko, C. Galiotis, N. Marzari, K. Novoselov, A. Geim, and A. Ferrari, Phys. Rev. B 79, 205433 (2009). 10.1103/PhysRevB.79.205433
43. S. Ryu, L. Liu, S. Berciaud, Y.-J. Yu, H. Liu, P. Kim, G. W. Flynn, and L. E. Brus, Nano Lett. 10, 4944 (2010). 10.1021/nl1029607
44. Y. Zhang, V. W. Brar, C. Girit, A. Zettl, and M. F. Crommie, Nat. Phys. 5, 722 (2009). 10.1038/nphys1365