Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Nano Letters

Volumn 15, Issue 1, 2015, Pages 392-397

  Ha, Tae Jun ^a,b,c   Chen, Kevin ^a,b   Chuang, Steven ^a,b   Yu, Kin Man ^b   Kiriya, Daisuke ^a,b   Javey, Ali ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Kwangwoon University   (South Korea)

Author keywords

CMOS; field effect transistors; n FETs; single walled carbon nanotubes; surface doping

Indexed keywords

CARBON; CARBON FILMS; CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; DANGLING BONDS; DEPOSITION; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON NITRIDE; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; YARN;

CAPACITANCE VOLTAGE MEASUREMENTS; CARBON NANOTUBE TRANSISTORS; CHARGE TRANSFER MECHANISMS; DOPING CONCENTRATION; POSITIVELY CHARGED; ROBUST APPROACHES; SILICON NITRIDE THIN FILMS; SURFACE DOPING;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 84920982498     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5037098     Document Type: Article

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