Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

Journal of Applied Physics

Volumn 117, Issue 3, 2015, Pages

  Young, Chadwin D ^a   Neugroschel, Arnost ^b   Majumdar, Kausik ^c   Matthews, Ken ^c   Wang, Zhe ^a   Hobbs, Chris ^c  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTRIC FIELDS; FINS (HEAT EXCHANGE); HOLE CONCENTRATION; INTEGRATED CIRCUITS; MOS DEVICES; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; SILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

APPROPRIATE MODELS; BIASING SCHEME; DEGRADATION MODEL; DEVICE CHANNEL; ELECTRIC FIELD PROFILES; ELECTRON ACCUMULATION; NEGATIVE BIAS TEMPERATURE INSTABILITY; SILICON ON INSULATOR WAFERS;

FIELD EFFECT TRANSISTORS;

EID: 84923688215     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4905415     Document Type: Article

References (26)

1. See http://newsroom.intel.com/community/intel-newsroom/blog/2011/05/04/intel-reinvents-transistors-using-new-3-d-structure for Intel, Intel Reinvents Transistors Using New 3-D Structure, 2011.
2. C. Young, K. Akarvardar, M. Baykan, K. Matthews, I. Ok, T. Ngai, K.-W. Ang, J. Pater, C. Smith, and M. Hussain, Solid-State Electron. 78, 2-10 (2012). 10.1016/j.sse.2012.05.045
3. C. D. Young, K. Akarvardar, K. Matthews, M. O. Baykan, J. Pater, I. Ok, T. Ngai, K.-W. Ang, M. Minakais, and G. Bersuker, ECS Trans. 50 (4), 201-206 (2013). 10.1149/05004.0201ecst
4. C.-W. Lee, A. Afzalian, I. Ferain, R. Yan, N. Dehdashti, K.-Y. Byun, C. Colinge, W. Xiong, and J.-P. Colinge, Microelectron. Eng. 86 (12), 2381-2384 (2009). 10.1016/j.mee.2009.04.025
5. N. Fasarakis, A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, K. Papathanasiou, J. Jomaah, and G. Ghibaudo, Solid-State Electron. 64 (1), 34-41 (2011). 10.1016/j.sse.2011.06.049
6. C.-W. Lee, I. Ferain, A. Afzalian, R. Yan, N. Dehdashti, P. Razavi, J.-P. Colinge, and J. T. Park, Microelectron. Reliab. 49 (9-11), 1044-1047 (2009). 10.1016/j.microrel.2009.06.011
7. S. Maeda, J.-A. Choi, J.-H. Yang, Y.-S. Jin, S.-K. Bae, Y.-W. Kim, and K.-P. Suh, presented at the 42nd Annual Reliability Physics Symposium Proceedings, IEEE International, Phoenix, AZ, April 2004.
8. J. J. Kim, M. Cho, L. Pantisano, U. Jung, Y. G. Lee, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, and B. H. Lee, IEEE Electron Device Lett. 33 (7), 937-939 (2012). 10.1109/LED.2012.2193868
9. H. Lee, C.-H. Lee, D. Park, and Y.-K. Choi, IEEE Electron Device Lett. 26 (5), 326-328 (2005). 10.1109/LED.2005.846587
10. R. Nathanael, X. Weize, C. R. Cleavelin, and L. Tsu-Jae King, IEEE Electron Device Lett. 29 (8), 916-919 (2008). 10.1109/LED.2008.2000944
11. L. Wen-Shiang, L. Yie-Gie, T. Mao-Chyuan, S. Chakraborty, and L. Chee-Wee, IEEE Electron Device Lett. 29 (7), 788-790 (2008). 10.1109/LED.2008.2000723
12. K. Majumdar and N. Bhat, J. Appl. Phys. 103 (11), 114503 (2008). 10.1063/1.2937186
13. C. Young, A. Neugroschel, K. Matthews, C. Smith, H. Park, M. Hussain, P. Majhi, and G. Bersuker, presented at the 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, October 2010.
14. K. O. Jeppson and C. M. Svensson, J. Appl. Phys. 48 (5), 2004-2014 (1977). 10.1063/1.323909
15. S. Ogawa, M. Shimaya, and N. Shiono, J. Appl. Phys. 77 (3), 1137-1148 (1995). 10.1063/1.358977
16. M. A. Alam, H. Kufluoglu, D. Varghese, and S. Mahapatra, Microelectron. Reliab. 47 (6), 853-862 (2007). 10.1016/j.microrel.2006.10.012
17. H. Kufluoglu and M. A. Alam, IEDM Tech. Dig. 2004, 113-116.
18. A. Neugroschel, G. Bersuker, R. Choi, and L. Byoung Hun, IEEE Trans. Device Mater. Reliab. 8 (1), 47-61 (2008). 10.1109/TDMR.2008.916294
19. J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 48 (6), 1127-1135 (2001). 10.1109/16.925238
20. G. Kapila, B. Kaczer, A. Nackaerts, N. Collaert, and G. V. Groeseneken, IEEE Electron Device Lett. 28 (3), 232-234 (2007). 10.1109/LED.2007.891263
21. C. D. Young, A. Neugroschel, K. Matthews, C. Smith, D. Heh, H. Park, M. M. Hussein, W. Taylor, and G. Bersuker, IEEE Electron Device Lett. 31 (7), 653-655 (2010). 10.1109/LED.2010.2049635
22. A. Neugroschel, S. Chih-Tang, K. M. Han, M. S. Carroll, T. Nishida, J. T. Kavalieros, and L. Yi, IEEE Trans. Electron Devices 42 (9), 1657-1662 (1995). 10.1109/16.405281
23. J. Cai and C. T. Sah, IEEE Trans. Electron Devices 47 (3), 576-583 (2000). 10.1109/16.824733
24. A. Neugroschel, G. Bersuker, and R. Choi, Microelectron. Reliab. 47 (9-11), 1366-1372 (2007). 10.1016/j.microrel.2007.07.037
25. A. Neugroschel, IEEE Trans. Electron Devices 28 (1), 108-115 (1981). 10.1109/T-ED.1981.20290
26. M. A. Shibib, F. A. Lindholm, and F. Therez, IEEE Trans. Electron Devices 26 (6), 959-965 (1979). 10.1109/T-ED.1979.19525