NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1044-1047

  Lee, Chi Woo ^a   Ferain, Isabelle ^a   Afzalian, Aryan ^a   Yan, Ran ^a   Dehdashti, Nima ^a   Razavi, Pedram ^a   Colinge, Jean Pierre ^a   Park, Jong Tae ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b SolarLight Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; DEVICE DEGRADATION; ENHANCED DIFFUSION; FIN WIDTHS; HOT CARRIER EFFECT; HOT-CARRIER; MULTIPLE GATES; NEGATIVE BIAS TEMPERATURE INSTABILITY; P-MOSFETS; STRESS CONDITION;

DEGRADATION; HYDROGEN; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

IMPACT IONIZATION;

EID: 69249206574     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.06.011     Document Type: Article

References (16)

1. Rauly E., Iniguez B., and Flandre D. Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance. Electrochem Solid-state Lett 4 3 (2001) G28-G30
2. Iqbal M.M., Hong Y., Grarg P., Udrea F., Migliorato P., and Fonash S. The nanoscale silicon accumulation-mode MOSFET - a comprehensive numerical study. IEEE Trans Electron Dev 55 11 (2008) 2946-2959
3. Cheng W., Teramoto A., Kuroda R., Hirayama M., and Ohmi T. High performance and highly reliable novel CMOS devices using accumulated mode multi-gate fully depleted SOI MOSFETs. Microelectron Eng 84 (2007) 2105-2108
4. Park J.T., and Colinge J.P. Multiple-gate SOI MOSFETs: device design guidelines. IEEE Trans Electron Dev 49 12 (2002) 2222-2228
5. Lee H., Lee C.H., Park D.G., and Choi Y.K. A study of negative temperature instability of SOI and body-tied FinFETs. IEEE Electron Dev Lett 26 5 (2005) 326-328
6. Küflüoglu H., and Alam M.A. Theory of interface-trap induced NBTI degradation for reduced cross section MOSFETs. IEEE Trans Electron Dev 5395 (2006) 1120-1130
7. Han J.W., Lee J.Y., Park D.K., and Choi Y.K. Body thickness dependence of impact ionization in a multiple gate FinFET. IEEE Electron Dev Lett 28 7 (2007) 625-627
8. Kaczer B., Arkhipov V., Degraeve R., Collaert N., Groeseneken G., and Goodwin M. Temperature dependence of the negative bias temperature instability in the framework of dispersive transport. Appl Phys Lett 86 14 (2005) (143506-1/3)
9. Huard V., Denais M., and Parthasarathy C. NBTI degradation: from physical mechanism to modeling. Microelectron Reliab 46 (2006) 1-23
10. Nishioka Y., Ohyu K., Ohji Y., and Ma T.P. Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs. IEEE Electron Dev Lett 10 12 (1989) 540-542
11. b interface defects. Appl Phys Lett 82 18 (2003) 3038-3040
12. Choi Y.K., Ha D.W., Snow E., Bokor J., and King T.J. Reliability study of CMOS FinFETs. Tech Dig IEDM (2003) 177-180
13. Yue J.M., Chim W.K., Cho B.J., Chan D.S., Qin W.H., Kim Y.B., et al. Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure. IEEE Electron Dev Lett 21 3 (2000) 130-132
14. Ioannou D.P., and Ioannou D.E. Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors. Solid-state Electron 51 (2007) 268-277
15. Koyanagi M., Lewis A.G., Martin R.A., Huang T.Y., and Chen J.Y. Hot-electron-induced punchthrough (HEIP) effect in submicrometer pMOSFETs. IEEE Trans Electron Dev 34 4 (1987) 839-844
16. .