Process-dependent N/PBTI characteristics of TiN gate FinFETs

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 937-939

  Kim, Jin Ju ^a   Cho, Moonju ^b   Pantisano, Luigi ^b   Jung, Ukjin ^a   Lee, Young Gon ^a   Chiarella, Thomas ^b   Togo, Mitsuhiro ^b   Horiguchi, Naoto ^b   Groeseneken, Guido ^b   Lee, Byoung Hun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b IMEC   (Belgium)

Author keywords

Atomic layer deposition (ALD); FinFET; negative bias temperature instability (NBTI); physical vapor deposition (PVD); positive bias temperature instability (PBTI); TiN metal gate

Indexed keywords

FIN WIDTHS; FINFET; FINFETS; INTERFACIAL OXIDE LAYERS; NEGATIVE BIAS TEMPERATURE INSTABILITY; NONUNIFORMITY; POSITIVE BIAS TEMPERATURE INSTABILITIES; RELIABILITY CHARACTERISTICS; TIN GATES; TIN METAL GATE;

ATOMIC LAYER DEPOSITION; FINS (HEAT EXCHANGE); HAFNIUM OXIDES; MOSFET DEVICES; PHYSICAL VAPOR DEPOSITION; RELIABILITY; TITANIUM NITRIDE; VAPORS;

INTEGRATED CIRCUITS;

EID: 84862875374     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2193868     Document Type: Article

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