Electrical characterization and reliability assessment of double-gate FinFETs

ECS Transactions

Volumn 50, Issue 4, 2013, Pages 201-206

  Young, C D ^a,b   Akarvardar, K ^a,c   Matthews, K ^a   Baykan, M O ^a,d   Pater, J ^a   Ok, I ^e   Ngai, T ^a   Ang, K W ^a   Minakais, M ^a   Bersuker, G ^a   Deora, S ^a   Hobbs, C ^a   Kirsch, P ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c GLOBALFOUNDRIES Assignee to SEMATECH   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

^e IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; FINFET; GATE DIELECTRICS; HAFNIUM COMPOUNDS; NANOELECTRONICS; NEGATIVE BIAS TEMPERATURE INSTABILITY; PHOTONICS; SILICON ON INSULATOR TECHNOLOGY; TITANIUM COMPOUNDS;

ELECTRICAL CHARACTERIZATION; MOBILITY DEPENDENCES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); ORIENTATION DEPENDENCE; PERFORMANCE AND RELIABILITIES; POLYSILICON ELECTRODES; RELIABILITY ASSESSMENTS; SILICON ON INSULATOR (SOI);

DIELECTRIC MATERIALS;

EID: 84885826084     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05004.0201ecst     Document Type: Conference Paper

References (18)

1. J. Huang, et al., IEEE VLSI-TSA, p. 152 (2008).
2. C. S. Park, et al., IEEE VLSI-TSA, p. 154 (2008).
3. X. P. Wang, et al., IEEE Elect. Dev. Lett., 27, p. 31 (2006).
4. K. Akarvardar, et al., IEEE VLSI-TSA, p. 1 (2012).
5. J. Becker, et al., Solid-State Electronics, 56, p. 104 (2011).
6. F. Conzatti, et al., IEEE Trans. Elect. Dev., 58, p. 1583 (2011).
7. L. Donetti, et al., Solid-State Electronics, 54, p. 191 (2010).
8. P. Gaubert, et al., Solid-State Electronics, 54, p. 420 (2010).
9. L. Silvestri, et al., IEEE Trans. Elect. Dev., 57, p. 1567 (2010).
10. L. Silvestri, et al., IEEE Trans. Elect. Dev., 57, p. 1575 (2010).
11. S. Viktor, et al., ESSDERC, p. 178 (2006).
12. M. Yang, et al., IEEE Trans. Elect. Dev., 53, p. 965 (2006).
13. P. Yang, et al., Solid-State Electronics, 54, p. 461 (2010).
14. C. D. Young, et al., IEEE VLSI-TSA, p. 18 (2011).
15. K. Akarvardar, et al., IEEE Trans. Elect. Dev., 33, p. 351 (2012).
16. C. D. Young, et al., Solid-State Electronics, to be published (2012).
17. S. Maeda, et al., IEEE Int'l Rel. Phys. Symp., p. 8 (2004).
18. C. D. Young, et al., Workshop on Dielectrics in Microelectronics, (2012).