Investigation of reliability characteristics in NMOS and PMOS FinFETs

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 788-790

  Liao, Wen Shiang ^a   Liaw, Yie Gie ^b   Tang, Mao Chyuan ^a   Chakraborty, Sandipan ^c   Liu, Chee Wee ^c  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b ASint Technology Corp   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

FinFET; High aspect ratio; Hot carrier injection (HCI); Lifetime; Negative bias temperature instability (NBTI); Reliability; Vertical double gate MOSFET

Indexed keywords

FINS (HEAT EXCHANGE); PHOTORESISTS; SILICON; THREE DIMENSIONAL;

FINFETS; HIGH ASPECT RATIO (HAR); RELIABILITY CHARACTERISTICS; THREE DIMENSIONAL (3D); VERTICAL DOUBLE GATE;

ASPECT RATIO;

EID: 47249154866     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000723     Document Type: Article

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