VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Lee, Rinus T P ^a   Hill, R J W ^a   Loh, W Y ^a   Baek, R H ^a   Deora, S ^a   Matthews, K ^a   Huffman, C ^a   Majumdar, K ^a   Michalak, T ^b   Borst, C ^b   Hung, P Y ^a   Chen, C H ^c   Yum, J H ^a   Kim, T W ^a   Kang, C Y ^a   Wang, Wei E ^a   Kim, D H ^c   Hobbs, C ^a   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b SUNY POLYTECHNIC INSTITUTE   (United States)

^c TSMC Assignee at Sematech ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894330627     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724546     Document Type: Conference Paper

References (6)

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2. S.H. Kim et al., VLSI Symp., p.177, 2012
3. R.J.W. Hill et al., IEDM Tech. Dig., p.130, 2010
4. S.H. Kim et al., IEDM Tech. Dig., p.26, 2010
5. X. Zhang et al., Electrochem. Solid-State Lett. p.H60, 2010
6. S. Subramanian et al., J. Electrochem. Soc. p.H16, 2012